GaGeSb alloys for high-speed reversible phase-change optical recording

被引：5

作者：

Dimitrov, DZ ^{[1
]}

Babeva, C ^{[1
]}

Cheng, ST ^{[1
]}

Hsu, WC ^{[1
]}

Hsieh, MH ^{[1
]}

Tsai, SY ^{[1
]}

机构：

[1] Ind Technol Res Inst, Mat Res Labs, Hsinchu 31015, Taiwan

来源：

OPTICAL DATA STORAGE 2004 | 2004年 / 5380卷

关键词：

phase-change materials; high-speed recording; GeSb based alloys;

D O I：

10.1117/12.557103

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

New Ga doped GeSb based phase-change materials are investigated. These materials possess good optical contrast at short wavelengths. Crystallization temperature increasing and grain size refinement are obtained by addition of Ga. More than 50 dB CNR and 25 dB erasability are measured in disks with simple four layer stacks using blue laser and linear velocities 7 m/s and 10.5 m/s.

引用

页码：487 / 492

页数：6

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