Quantitative analysis of random telegraph signals as fluctuations of threshold voltages in scaled flash memory cells

被引：26

作者：

Miki, H. ^{[1
]}

Osabe, T. ^{[1
]}

Tega, N. ^{[1
]}

Kotabe, A. ^{[1
]}

Kurata, H. ^{[1
]}

Tokami, K. ^{[2
]}

Ikeda, Y. ^{[2
]}

Kamohara, S. ^{[2
]}

Yamada, R. ^{[1
]}

机构：

[1] Hitachi Ltd, Cent Res Lab, 1-280 Higashi Koigakubo, Kokubunji, Tokyo 1858601, Japan

[2] Renesas Technol Corp, Chiyoda Ku, Tokyo 1006334, Japan

来源：

2007 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 45TH ANNUAL | 2007年

关键词：

random; telegraph signal; RTS; flash memories; V-th fluctuation; oxide breakdown; percolation;

D O I：

10.1109/RELPHY.2007.369864

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Random telegraph signals (RTS) in fluctuations of threshold voltage are analyzed using massive readout data in scaled flash memories. A novel quantitative analytical method is proposed to evaluate parameters of the RTS, such as amplitudes and mean time spent in individual states. This evaluation gives us a statistical view of parameters of the RTS as well as their correlations. All of the parameters were found to follow log-normal distribution and to show weak mutual dependences. Possible origins of the distributions are discussed. We also studied evolution of RTS during program/erase operations of flash memories and point out its potential similarity with breakdown phenomena in gate oxide.

引用

页码：29 / +

页数：4

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