Fabrication, analysis and characterization of Cu2Zn1-x Cd x SnS4 quinternary alloy nanostructures deposited on GaN

被引：21

作者：

Ibraheam, A. S. ^{[1
]}

Al-Douri, Y. ^{[1
,2
]}

Hashim, U. ^{[1
]}

Prakash, Deo ^{[3
]}

Verma, K. D. ^{[4
]}

Ameri, M. ^{[5
]}

机构：

[1] Univ Malaysia Perlis, Inst Nano Elect Engn, Kangar 01000, Perlis, Malaysia

[2] Univ Djillali Liabes Sidi Bel Abbes, Fac Sci, Dept Phys, Sidi Bel Abbes 22000, Algeria

[3] SMVD Univ, Fac Engn, Sch Comp Sci & Engn, Katra 182320, Jammu & Kashmir, India

[4] SV Coll, Dept Phys, Mat Sci Res Lab, Aligarh 202001, Uttar Pradesh, India

[5] Univ Djilali Liabes Sidi Bel Abbes, LPCMA, Sidi Bel Abbes 22000, Algeria

来源：

JOURNAL OF MATERIALS SCIENCE | 2016年 / 51卷 / 14期

关键词：

NANOCRYSTALS;

D O I：

10.1007/s10853-016-9975-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The Cu2Zn1-x Cd (x) SnS4 quinternary alloy nanostructures with different Cd concentrations were prepared using spin coating technique on GaN substrate. The structural properties of Cu2Zn1-x Cd (x) SnS4/GaN were investigated by X-ray diffraction (XRD) and field emission-scanning electron microscope. XRD studies indicated that kesterite phase of Cu2ZnSnS4 and stannite phase of Cu2CdSnS4 were formed. The optical properties were studied through photoluminescence technique, and indicated that the band gap shifted as Cd concentration increases from 1.75 eV in Cu2ZnSnS4 to 1.65 eV in Cu2CdSnS4. The electrical characterization of the Ag/n-GaN/Cu2Zn1-x Cd (x) SnS4/Ag diode through current to voltage (I-V) characterization showed the highest photoresponse of (value if any) at Cu2Zn0.4Cd0.6SnS4 composition.

引用

页码：6876 / 6885

页数：10

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