SIMS quantification of as and in in Hg1-xCdxTe materials of different x values

This paper presents a study of Secondary Ion Mass Spectrometry (SIMS) quantification of As and In in Hg1-xCdxTe materials. The SIMS results show that for Hg1-xCdxTe with x from 0.2 to 0.8, As and In quantification is independent of the x-values (0.2-0.8). The relative sensitivity factors (RSF) for In and As derived from the standard of one x value can be used to accurately quantify unknown samples of different x value(s). We also determined the dependence of sputtering rate vs. x values under oxygen beam bombardment.