Optical investigations of solid-phase crystallization of Si1-xGex

被引：4

作者：

Yamaguchi, S ^{[1
]}

Sugii, N

Nakagawa, K

Miyao, M

机构：

[1] Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 1858601, Japan

[2] Kyushu Univ, Fukuoka 8128581, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2000年 / 39卷 / 4B期

关键词：

solid-phase crystallization; silicon; germanium; defect; ellipsometry;

D O I：

10.1143/JJAP.39.2054

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Solid-phase crystallization (SPC) of amorphous Si1-xGex (0 less than or equal to x less than or equal to 0.3) formed by ion-implantation into epitaxially-grown single crystals was investigated by using ellipsometric spectroscopy. We found that the attenuation constant of optical transition is proportional to the calculated defect density. Annealing-temperature profiles of the defect density juring SDC of Si1-xGex were obtained. It was found that the higher the defect density in the amorphous state, the lower the crystallization temperature of Si1-xGex. And increasing Ge concentration in Si, the crystallization temperature decreases monotonically, which implies a decrease in the activation energy of SPC. It is concluded that the increased lattice constant and reduced strain (caused by Ge introduction into Si) mainly control the SPC of Si1-xGex.

引用

页码：2054 / 2057

页数：4

共 12 条

[1] STRAIN-INDUCED TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED SI/SIXGE1-X SUPERLATTICES [J].

ABSTREITER, G ;

BRUGGER, H ;

WOLF, T ;

JORKE, H ;

HERZOG, HJ .

PHYSICAL REVIEW LETTERS, 1985, 54 (22) :2441-2444

[2] CRITICAL POINTS AND ULTRAVIOLET REFLECTIVITY OF SEMICONDUCTORS [J].

BRUST, D ;

BASSANI, F ;

PHILLIPS, JL .

PHYSICAL REVIEW LETTERS, 1962, 9 (03) :94-&

[3] HIGH ELECTRON-MOBILITY IN MODULATION-DOPED SI/SIGE [J].

ISMAIL, K ;

MEYERSON, BS ;

WANG, PJ .

APPLIED PHYSICS LETTERS, 1991, 58 (19) :2117-2119

[4] GROWTH TEMPERATURE-DEPENDENCE OF INTERFACIAL ABRUPTNESS IN SI/GE HETEROEPITAXY STUDIED BY RAMAN-SPECTROSCOPY AND MEDIUM ENERGY ION-SCATTERING [J].

IYER, SS ;

TSANG, JC ;

COPEL, MW ;

PUKITE, PR ;

TROMP, RM .

APPLIED PHYSICS LETTERS, 1989, 54 (03) :219-221

[5] THE INFLUENCE OF FOREIGN ATOMS ON THE EPITAXIAL ANNEALING OF ION-IMPLANTED SILICON [J].

KERKOW, H ;

KREYSCH, G ;

LUKASCH, B .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 82 (01) :125-133

[6] SOLID-PHASE EPITAXIAL CRYSTALLIZATION OF STRAIN-RELAXED SI1-XGEX ALLOY LAYERS [J].

KRINGHOJ, P ;

ELLIMAN, RG .

PHYSICAL REVIEW LETTERS, 1994, 73 (06) :858-861

[7] MOLECULAR-BEAM EPITAXY OF SILICON-BASED HETEROSTRUCTURE AND ITS APPLICATION TO NOVEL DEVICES [J].

MIYAO, M ;

NAKAGAWA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (7A) :3791-3802

[8] DIELECTRIC FUNCTION SPECTRA OF STAINED AND RELAXED SI(1-X)GE(X) ALLOYS (X=0-0.25) [J].

PICKERING, C ;

CARLINE, RT .

JOURNAL OF APPLIED PHYSICS, 1994, 75 (09) :4642-4647

[9] High electron mobility in strained Si channel of Si1-xGex/Si/Si1-xGex heterostructure with abrupt interface [J].

Sugii, N ;

Nakagawa, K ;

Kimura, Y ;

Yamaguchi, S ;

Miyao, M .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (8A) :A140-A142

[10] Atomic-layer doping in Si1-xGex/Si/Si1-xGex heterostructures by two-step solid-phase epitaxy [J].

Sugii, N ;

Nakagawa, K ;

Yamaguchi, S ;

Miyao, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (4B) :2424-2426

← 1 2 →