Adaptive finite element simulation of currents at microelectrodes to a guaranteed accuracy.: ECE and EC2E mechanisms at channel microband electrodes

被引:15
作者
Harriman, K
Gavaghan, DJ
Houston, P
Kay, D
Süli, E
机构
[1] Univ Oxford, Comp Lab, Oxford OX1 3QD, England
[2] Radcliffe Infirm, Nuffield Dept Anaesthet, Oxford OX2 6HE, England
[3] Univ Leicester, Dept Math & Comp Sci, Leicester LE1 7RH, Leics, England
[4] Univ Sussex, Sch Math Sci, Falmer BN1 9QH, E Sussex, England
基金
英国医学研究理事会; 英国工程与自然科学研究理事会;
关键词
channel microband electrodes; ECE and EC2E reaction mechanisms; adaptive finite element method; simulation;
D O I
10.1016/S1388-2481(00)00075-8
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
We extend the work in the accompanying paper (K. Harriman et al., Electrochem. Commun. 2 (2000) 567) on the use of adaptive finite element methods to simulate the current for a steady state E reaction mechanism at a channel microband electrode to the more complex ECE mechanism, and the non-linear EC2E mechanism. We again use the standard Galerkin approach for the diffusion dominated (low-flow) case, and the streamline diffusion finite element method (SDFEM) for convection-dominated (high-flow) case, and compare our results with previous numerical and analytical approximations. We give a general discussion on the implications of our results for numerical simulation at microelectrodes. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:576 / 585
页数:10
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