Three distinct optical-switching states in phase-change materials containing impurities: From physical origin to material design

被引:9
作者
Bi, Chaobin [1 ]
Xu, Kaicheng [2 ]
Hu, Chaoquan [1 ]
Zhang, Ling [3 ]
Yang, Zhongbo [1 ]
Tao, Shuaipeng [1 ]
Zheng, Weitao [1 ,4 ]
机构
[1] Jilin Univ, Sch Mat Sci & Engn, State Key Lab Superhard Mat, Key Lab Automobile Mat MOE, Changchun 130012, Peoples R China
[2] Jilin Univ, China Japan Union Hosp, Changchun 130033, Peoples R China
[3] Jilin Univ, Coll Chem, State Key Lab Supramol Struct & Mat, Changchun 130012, Peoples R China
[4] Jilin Univ, State Key Lab Automot Simulat & Control, Changchun 130025, Peoples R China
来源
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY | 2021年 / 75卷
基金
中国国家自然科学基金; 国家重点研发计划;
关键词
Phase change materials; Impurities; Three states; Structural disorder; Photonic applications; GE2SB2TE5; THIN-FILM; DOPED GE2SB2TE5; DISORDER; TRANSITIONS; MODULATION; RESISTANCE; CONTRAST; BEHAVIOR;
D O I
10.1016/j.jmst.2020.09.043
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Ge2Sb2Te5 is the most widely utilized chalcogenide phase-change material for non-volatile photonic applications, which undergoes amorphous-cubic and cubic-hexagonal phase transition under external excitations. However, the cubic-hexagonal optical contrast is negligible, only the amorphous-cubic phase transition of Ge2Sb2Te5 is available. This limits the optical switching states of traditional active displays and absorbers to two. We find that increasing structural disorder difference of cubic-hexagonal can increase optical contrast close to the level of amorphous-cubic. Therefore, an amorphous-cubic hexagonal phase transition with high optical contrast is realized. Using this phase transition, we have developed display and absorber with three distinct switching states, improving the switching performance by 50 %. Through the combination of first-principle calculations and experiments, we reveal that the key to increasing structural disorder difference of amorphous, cubic and hexagonal phases is to introduce small interstitial impurities (like N) in Ge2Sb2Te5, rather than large substitutional impurities (like Ag) previously thought. This is explained by the formation energy and lattice distortion. Based on the impurity atomic radius, interstitial site radius and formation energy, C and B are also potential suitable impurities. In addition, introducing interstitial impurities into phase-change materials with van der Waals gaps in stable phase such as GeSb4Te7, GeSb2Te4, Ge3Sb2Te6, Sb2Te3 will produce high optical contrast amorphous-metastable-stable phase transition. This research not only reveals the important role of interstitial impurities in increasing the optical contrast between metastable-stable phases, but also proposes varieties of candidate matrices and impurities. This provides new phase-change materials and design methods for non-volatile optical devices with multi-switching states. (C) 2021 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.
引用
收藏
页码:118 / 125
页数:8
相关论文
共 65 条
[1]   Resistance modulation in Ge2Sb2Te5 [J].
Behera, Jitendra K. ;
Wang, WeiJie ;
Zhou, Xilin ;
Guan, Shan ;
Weikang, Wu ;
Shengyuan, Yang A. ;
Simpson, Robert E. .
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2020, 50 :171-177
[2]   Impact of disorder on optical reflectivity contrast of epitaxial Ge2Sb2Te5 thin films [J].
Behrens, Mario ;
Lotnyk, Andriy ;
Ross, Ulrich ;
Griebel, Jan ;
Schumacher, Philipp ;
Gerlach, Juergen W. ;
Rauschenbach, Bernd .
CRYSTENGCOMM, 2018, 20 (26) :3688-3695
[3]   THEORETICAL-STUDIES OF VANDERWAALS MOLECULES AND INTERMOLECULAR FORCES [J].
BUCKINGHAM, AD ;
FOWLER, PW ;
HUTSON, JM .
CHEMICAL REVIEWS, 1988, 88 (06) :963-988
[4]   A Nonvolatile Phase-Change Metamaterial Color Display [J].
Carrillo, Santiago Garcia-Cuevas ;
Trimby, Liam ;
Au, Yat-Yin ;
Nagareddy, V. Karthik ;
Rodriguez-Hernandez, Gerardo ;
Hosseini, Peiman ;
Rios, Carlos ;
Bhaskaran, Harish ;
Wright, C. David .
ADVANCED OPTICAL MATERIALS, 2019, 7 (18)
[5]   Reconfigurable phase-change meta-absorbers with on-demand quality factor control [J].
Carrillo, Santiago Garcia-Cuevas ;
Alexeev, Arseny M. ;
Au, Yat-Yin ;
Wright, C. David .
OPTICS EXPRESS, 2018, 26 (20) :25567-25581
[6]   Device-Level Photonic Memories and Logic Applications Using Phase-Change Materials [J].
Cheng, Zengguang ;
Rios, Carlos ;
Youngblood, Nathan ;
Wright, C. David ;
Pernice, Wolfram H. P. ;
Bhaskaran, Harish .
ADVANCED MATERIALS, 2018, 30 (32)
[7]   DISORDER AND THE OPTICAL-ABSORPTION EDGE OF HYDROGENATED AMORPHOUS-SILICON [J].
CODY, GD ;
TIEDJE, T ;
ABELES, B ;
BROOKS, B ;
GOLDSTEIN, Y .
PHYSICAL REVIEW LETTERS, 1981, 47 (20) :1480-1483
[8]   Insights into the structure of the stable and metastable (GeTe)m(Sb2Te3)n compounds [J].
Da Silva, Juarez L. F. ;
Walsh, Aron ;
Lee, Hosun .
PHYSICAL REVIEW B, 2008, 78 (22)
[9]   Tunable Mid-Infrared Phase-Change Metasurface [J].
Dong, Weiling ;
Qiu, Yimei ;
Zhou, Xilin ;
Banas, Agnieszka ;
Banas, Krzysztof ;
Breese, Mark B. H. ;
Cao, Tun ;
Simpson, Robert E. .
ADVANCED OPTICAL MATERIALS, 2018, 6 (14)
[10]   Control over emissivity of zero-static-power thermal emitters based on phase-changing material GST [J].
Du, Kai-Kai ;
Li, Qiang ;
Lyu, Yan-Biao ;
Ding, Ji-Chao ;
Lu, Yue ;
Cheng, Zhi-Yuan ;
Qiu, Min .
LIGHT-SCIENCE & APPLICATIONS, 2017, 6 :e16194-e16194