Majority carrier type conversion in solution-processed organic transistors and flexible complementary logic circuits

被引：45

作者：

Ribierre, J. C. ^{[1
]}

Watanabe, S. ^{[1
,2
]}

Matsumoto, M. ^{[2
]}

Muto, T. ^{[1
]}

Aoyama, T. ^{[1
]}

机构：

[1] RIKEN, Supramol Sci Lab, Wako, Saitama 3510198, Japan

[2] Tokyo Univ Sci, Dept Mat Sci & Technol, Noda, Chiba 2788510, Japan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 08期

关键词：

electron mobility; hole mobility; organic semiconductors; rapid thermal annealing; thin film transistors; FIELD-EFFECT TRANSISTORS; AMBIPOLAR; HETEROSTRUCTURE; PENTACENE; INVERTERS; POLYMER;

D O I：

10.1063/1.3310025

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the realization of high performance solution-processed ambipolar organic transistors based on a quinoidal oligothiophene derivative. The devices show hole and electron field-effect mobilities in air as high as 0.1 and 0.006 cm(2) V(-1) s(-1), respectively, and can be converted from ambipolar p-type dominant to n-type transistors by thermal annealing. The conversion of the majority carrier type is assigned to strong variations in molecular packing. The demonstration of complementary flexible inverters suggests an effective strategy for patterning lateral pn-bipolar structures in solution-processed thin films made from a monolithic ambipolar organic semiconductor.

引用

页数：3

共 17 条

[1] Organic complementary-like inverters employing methanofullerene-based ambipolar field-effect transistors [J].

Anthopoulos, TD ;

de Leeuw, DM ;

Cantatore, E ;

Setayesh, S ;

Meijer, EJ ;

Tanase, C ;

Hummelen, JC ;

Blom, PWM .

APPLIED PHYSICS LETTERS, 2004, 85 (18) :4205-4207

[2] Air-stable complementary-like circuits based on organic ambipolar transistors [J].

Anthopoulos, Thomas D. ;

Setayesh, Sepas ;

Smits, Edsger ;

Colle, Michael ;

Cantatore, Eugenio ;

de Boer, Bert ;

Blom, Paul W. M. ;

de Leeuw, Dago M. .

ADVANCED MATERIALS, 2006, 18 (14) :1900-+

[3] Complementary organic field effect transistors by ultraviolet dielectric interface modification [J].

Benson, Niels ;

Schidleja, Martin ;

Melzer, Christian ;

Schmechel, Roland ;

von Seggern, Heinz .

APPLIED PHYSICS LETTERS, 2006, 89 (18)

[4] High-mobility ambipolar near-infrared light-emitting polymer field-effect transistors [J].

Buergi, Lukas ;

Turbiez, Mathieu ;

Pfeiffer, Reto ;

Bienewald, Frank ;

Kirner, Hans-Joerg ;

Winnewisser, Carsten .

ADVANCED MATERIALS, 2008, 20 (11) :2217-2224

[5] Ambipolar transport in organic conjugated material [J].

Cornil, Jerome ;

Bredas, Jean-Luc ;

Zaumseil, Jana ;

Sirringhaus, Henning .

ADVANCED MATERIALS, 2007, 19 (14) :1791-1799

[6] ORGANIC HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS [J].

DODABALAPUR, A ;

KATZ, HE ;

TORSI, L ;

HADDON, RC .

SCIENCE, 1995, 269 (5230) :1560-1562

[7] SYNTHESIS AND PROPERTIES OF ALPHA,OMEGA-DISUBSTITUTED OLIGO(3-HEXYLTHIOPHENE)S AND OLIGOTHIENOQUINONOIDS IN HEAD-TO-HEAD ORIENTATION [J].

HIGUCHI, H ;

NAKAYAMA, T ;

KOYAMA, H ;

OJIMA, J ;

WADA, T ;

SASABE, H .

BULLETIN OF THE CHEMICAL SOCIETY OF JAPAN, 1995, 68 (08) :2363-2377

[8] Fabrication of ambipolar field-effect transistor device with heterostructure of C60 and pentacene [J].

Kuwahara, E ;

Kubozono, Y ;

Hosokawa, T ;

Nagano, T ;

Masunari, K ;

Fujiwara, A .

APPLIED PHYSICS LETTERS, 2004, 85 (20) :4765-4767

[9] Solution-processed ambipolar organic field-effect transistors and inverters [J].

Meijer, EJ ;

De Leeuw, DM ;

Setayesh, S ;

Van Veenendaal, E ;

Huisman, BH ;

Blom, PWM ;

Hummelen, JC ;

Scherf, U ;

Klapwijk, TM .

NATURE MATERIALS, 2003, 2 (10) :678-682

[10] A bright future for organic field-effect transistors [J].

Muccini, Michele .

NATURE MATERIALS, 2006, 5 (08) :605-613

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