Microstructure and dielectric relaxor properties for Ba0.5Sr0.5TiO3/La0.67Sr0.33MnO3 heterostructure

被引:25
作者
Miao, J. [1 ]
Tian, H. Y.
Zhou, X. Y.
Pang, K. H.
Wang, Y.
机构
[1] Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China
[2] Hong Kong Polytech Univ, Mat Res Ctr, Hong Kong, Hong Kong, Peoples R China
关键词
D O I
10.1063/1.2721393
中图分类号
O59 [应用物理学];
学科分类号
摘要
Ferroelectric and magnetoresistance heterostructure (Ba,Sr)TiO(3)/(La,Sr)MnO(3) (BST/LSMO) heterostructure is deposited epitaxially on SrTiO(3) (001) substrate by pulse laser deposition. The phase structures of the BST/LSMO heterostructure are characterized by x-ray diffraction. Cross-sectional transmission electron microscope shows a substantial interdiffusision between BST and LSMO layers. The dielectric properties and conductivity of BST/LSMO heterostructure is measured as a function of temperature, frequency, and electric field. The dielectric constant dependence on electric field, epsilon vs E, exhibits a strong nonlinear behavior in the temperature from 20 to 300 K, while epsilon((E=0)) vs T relation shows a dielectric relaxor characteristic. Furthermore, the dielectric constant (E=0 kV/cm) and the dielectric tunability (E=200 kV/cm) are found to be similar temperature dependencies. Last, in the temperature regime where a semiconduction-type conduction became dominate, the activation thermal energy of BST/LSMO heterostructure is estimated to be 0.67 and 0.73 eV at 1 kHz and 1 MHz, respectively. (c) 2007 American Institute of Physics.
引用
收藏
页数:6
相关论文
共 29 条
[1]   Epitaxial growth of dielectric Ba0.6Sr0.4TiO3 thin film on MgO for room temperature microwave phase shifters [J].
Chen, CL ;
Shen, J ;
Chen, SY ;
Luo, GP ;
Chu, CW ;
Miranda, FA ;
Van Keuls, FW ;
Jiang, JC ;
Meletis, EI ;
Chang, HY .
APPLIED PHYSICS LETTERS, 2001, 78 (05) :652-654
[2]   Electrical properties and crystal structure of (Ba,Sr)TiO3 films prepared at low temperatures on a LaNiO3 electrode by radio-frequency magnetron sputtering [J].
Chu, CM ;
Lin, P .
APPLIED PHYSICS LETTERS, 1997, 70 (02) :249-251
[3]   Evaluation of Ta2O5 as a buffer layer film for integration of microwave tunable Ba1-xSrxTiO3 based thin films with silicon substrates [J].
Cole, MW ;
Joshi, PC ;
Ervin, M ;
Wood, M ;
Pfeffer, RL .
JOURNAL OF APPLIED PHYSICS, 2002, 92 (07) :3967-3973
[4]  
DEVONSHIRE AF, 1949, PHILOS MAG, V40, P1040
[6]   La0.8Sr0.2MnO3-heterostructure effects on the dielectric properties of PbTiO3-based thin films [J].
Es-Souni, M ;
Girdauskaite, E ;
Iakovlev, S ;
Solterbeck, CH ;
Zaporojtchenko, V .
JOURNAL OF APPLIED PHYSICS, 2004, 96 (10) :5691-5696
[7]   High dielectric constant and tunability of epitaxial SrTiO3 thin film capacitors [J].
Fuchs, D ;
Schneider, CW ;
Schneider, R ;
Rietschel, H .
JOURNAL OF APPLIED PHYSICS, 1999, 85 (10) :7362-7369
[8]   Microstructure and dielectric properties of Ba1-xSrxTiO3 films grown on LaAlO3 substrates [J].
Gim, Y ;
Hudson, T ;
Fan, Y ;
Kwon, C ;
Findikoglu, AT ;
Gibbons, BJ ;
Park, BH ;
Jia, QX .
APPLIED PHYSICS LETTERS, 2000, 77 (08) :1200-1202
[9]   Epitaxial ferroelectric/giant magnetoresistive heterostructures for magnetosensitive memory cell [J].
Grishin, AM ;
Khartsev, SI ;
Johnsson, P .
APPLIED PHYSICS LETTERS, 1999, 74 (07) :1015-1017
[10]   A comparative study on the electrical conduction mechanisms of (Ba0.5Sr0.5)TiO3 thin films on Pt and IrO2 electrodes [J].
Hwang, CS ;
Lee, BT ;
Kang, CS ;
Kim, JW ;
Lee, KH ;
Cho, HJ ;
Horii, H ;
Kim, WD ;
Lee, SI ;
Roh, YB ;
Lee, MY .
JOURNAL OF APPLIED PHYSICS, 1998, 83 (07) :3703-3713