Surface-directed spinodal decomposition in the pseudobinary alloy (HfO2)x(SiO2)1-x

被引：12

作者：

Liu, J. ^{[1
]}

Wu, X. ^{[2
]}

Lennard, W. N. ^{[1
]}

Landheer, D. ^{[2
]}

Dharma-Wardana, M. W. C. ^{[2
]}

机构：

[1] Univ Western Ontario, Dept Phys & Astron, London, ON N6A 3K7, Canada

[2] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 107卷 / 12期

基金：

加拿大自然科学与工程研究理事会;

关键词：

SILICATE THIN-FILMS; RAY PHOTOELECTRON-SPECTROSCOPY; GATE DIELECTRICS; PHASE-SEPARATION; POLYMER; SCATTERING; HAFNIUM; TEMPERATURE; DEPOSITION; MIXTURE;

D O I：

10.1063/1.3448232

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hf silicate films (HfO2)(0.25)(SiO2)(0.75) with thicknesses in the range 4-20 nm were grown on silicon substrate by atomic layer deposition at 350 degrees C. Hf distributions in as-grown and 800 degrees C annealed films were investigated by high resolution transmission electron microscopy (HRTEM), angle-resolved x-ray photoelectron spectroscopy (ARXPS), and medium energy ion scattering (MEIS). HRTEM images show a layered structure in films thinner than 8 nm. The ARXPS data also reveal a nonuniform distribution of Hf throughout the film depth. Diffusion of SiO2 to the film surface after a longer time anneal was observed by MEIS. All these observations provide evidence for surface-directed spinodal decomposition in the pseudobinary (HfO2)(x)(SiO2)(1-x) alloy system. (C) 2010 American Institute of Physics. [doi:10.1063/1.3448232]

引用

页数：9

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