Direct observation of a Ga adlayer on a GaN(0001) surface by LEED Patterson inversion

被引：20

作者：

Xu, SH ^{[1
]}

Wu, HS

Dai, XQ

Lau, WP

Zheng, LX

Xie, MH

Tong, SY

机构：

[1] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China

[2] Univ Hong Kong, HKU CAS Joint Lab New Mat, Hong Kong, Hong Kong, Peoples R China

[3] City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China

来源：

PHYSICAL REVIEW B | 2003年 / 67卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.67.125409

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A low-energy electron diffraction (LEED) Patterson function (PF) with multiple incident angles is used to obtain three-dimensional interatomic information of hexagonal GaN(0001) grown on a 6H-SiC(0001)-root3 x 3 surface. A Ga-Ga atomic pair between the Ga adlayer and the terminating Ga layer is observed in the LEED PF. This provides direct experimental evidence to support the structural model proposed by first-principles calculations. The LEED PF also shows that the GaN film has a hexagonal structure and the surface has single-bilayer steps.

引用

页数：4

共 10 条

[1] Direct three-dimensional Patterson inversion of low-energy electron diffraction I(E) curves [J].

Chang, CY ;

Lin, ZC ;

Chou, YC ;

Wei, CM .

PHYSICAL REVIEW LETTERS, 1999, 83 (13) :2580-2583

[2] Structure of GaN(0001): The laterally contracted Ga bilayer model [J].

Northrup, JE ;

Neugebauer, J ;

Feenstra, RM ;

Smith, AR .

PHYSICAL REVIEW B, 2000, 61 (15) :9932-9935

[3] Reflection high-energy electron diffraction intensity oscillations during growth of GaN(0001)A by plasma-assisted molecular beam epitaxy [J].

Seutter, SM ;

Xie, MH ;

Zhu, WK ;

Zheng, LX ;

Wu, HS ;

Tong, SY .

SURFACE SCIENCE, 2000, 445 (2-3) :L71-L75

[4] Reconstructions of the GaN(000(1)over-bar) surface [J].

Smith, AR ;

Feenstra, RM ;

Greve, DW ;

Neugebauer, J ;

Northrup, JE .

PHYSICAL REVIEW LETTERS, 1997, 79 (20) :3934-3937

[5] Reconstructions of GaN(0001) and (0001) surfaces: Ga-rich metallic structures [J].

Smith, AR ;

Feenstra, RM ;

Greve, DW ;

Shin, MS ;

Skowronski, M ;

Neugebauer, J ;

Northrup, JE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (04) :2242-2249

[6] Determination of wurtzite GaN lattice polarity based on surface reconstruction [J].

Smith, AR ;

Feenstra, RM ;

Greve, DW ;

Shin, MS ;

Skowronski, M ;

Neugebauer, J ;

Northrup, JE .

APPLIED PHYSICS LETTERS, 1998, 72 (17) :2114-2116

[7] Surface atomic arrangement visualization via reference-atom-specific holography [J].

Wu, HS ;

Xu, SH ;

Ma, S ;

Lau, WP ;

Xie, MH ;

Tong, SY .

PHYSICAL REVIEW LETTERS, 2002, 89 (21) :216101-216101

[8] Surface Patterson function by inversion of low-energy electron diffraction I-V spectra at multiple incident angles -: art. no. 036101 [J].

Wu, HS ;

Tong, SY .

PHYSICAL REVIEW LETTERS, 2001, 87 (03) :36101-1

[9] Anisotropic step-flow growth and island growth of GaN(0001) by molecular beam epitaxy [J].

Xie, MH ;

Seutter, SM ;

Zhu, WK ;

Zheng, LX ;

Wu, HS ;

Tong, SY .

PHYSICAL REVIEW LETTERS, 1999, 82 (13) :2749-2752

[10] Structures of GaN(0001)-(2x2), -(4x4), and -(5x5) surface reconstructions [J].

Xue, QK ;

Xue, QZ ;

Bakhtizin, RZ ;

Hasegawa, Y ;

Tsong, IST ;

Sakurai, T ;

Ohno, T .

PHYSICAL REVIEW LETTERS, 1999, 82 (15) :3074-3077

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