The Influence of Oxygen Flow Ratio on the Optoelectronic Properties of p-Type Ni1-xO Films Deposited by Ion Beam Assisted Sputtering

被引：12

作者：

Sun, Hui ^{[1
]}

Chen, Sheng-Chi ^{[2
,3
,4
]}

Peng, Wen-Chi ^{[2
,3
]}

Wen, Chao-Kuang ^{[5
]}

Wang, Xin ^{[6
]}

Chuang, Tung-Han ^{[5
]}

机构：

[1] Shandong Univ Weihai, Sch Space Sci & Phys, 180 Wenhuaxi Rd, Weihai 264209, Peoples R China

[2] Ming Chi Univ Technol, Dept Mat Engn, Taipei 243, Taiwan

[3] Ming Chi Univ Technol, Ctr Thin Film Technol & Applicat, Taipei 243, Taiwan

[4] Chang Gung Univ, Dept Elect Engn, Taoyuan 333, Taiwan

[5] Natl Taiwan Univ, Inst Mat Sci & Engn, Taipei 106, Taiwan

[6] Ocean Univ China, Inst Mat Sci & Engn, 238 Songling Rd, Qingdao 266100, Peoples R China

来源：

COATINGS | 2018年 / 8卷 / 05期

基金：

中国国家自然科学基金;

关键词：

NiO thin films; optoelectronic properties; oxygen flow ratio; ion source assisted sputtering; p-type conduction; THIN-FILMS; ELECTRICAL-PROPERTIES; OPTICAL-PROPERTIES; PARTIAL-PRESSURE; HIGHLY TRANSPARENT; OXIDE-FILMS; NIO; TEMPERATURE; FABRICATION; OXIDATION;

D O I：

10.3390/coatings8050168

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work, p-type non-stoichiometric Ni1-xO thin films were deposited by oxygen ion beam assisted RF sputtering on glass substrates. The influence of the oxygen flow ratio (0-100%) on the films' optoelectronic properties was investigated. In our experimental conditions, all the films are crystallized in the cubic NiO phase. However, their crystallinity and mean grain size decreases with increasing oxygen flow ratios. Meanwhile, the films' conductivity improves from 9.1 to 25.4 S.cm(-1). This is due to the fact that the nickel vacancies along with hole carriers can be introduced into NiO films when they are deposited under higher oxygen flow ratio conditions. Thus, the O-rich environment is beneficial in enhancing the films' carrier concentrations. In addition, with an increasing oxygen flow ratio, the film's transmittance degrades. The direct optical band gap of Ni1-xO films declines slightly from 3.99 to 3.95 eV, with the oxygen flow ratio increasing from 0% to 100%.

引用

页数：10

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