Muonium transitions in n-type gallium nitride

被引：10
|
作者：
Dawdy, MR
Lichti, RL [1 ]
Cox, SFJ
Head, TL
Schwab, C
机构：
[1] Texas Tech Univ, Dept Phys, Lubbock, TX 79409 USA
[2] Rutherford Appleton Lab, ISIS Facil, Chilton OX11 0QX, England
[3] UCL, London WCE 6BT, England
[4] CNRS, PHASE, F-67037 Strasbourg, France
来源：
PHYSICA B-CONDENSED MATTER | 2000年 / 289卷
基金：
美国国家科学基金会;
关键词：
Mu(-); GaN; zero-field mu SR; transition rates;
D O I：
10.1016/S0921-4526(00)00248-9
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The temperature-dependent asymmetries for zero-field relaxation components are used to characterize muonium transitions in n-type GaN. Kubo-Toyabe components are associated with Mu(-) states and an exponential is assigned to Mu(0) centers. Transitions observed in the 150-200 K region result in Mu(-) trapped at a metastable site. A model-dependent analysis allows separation of contributions from the two Mu(-) states. The Mu(0)-related rate diverges near 600 K, and Mu(-) begins to exit the metastable location. Approximate transition energies are obtained within this constrained treatment. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：546 / 549
页数：4
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