Scanning tunneling microscopy study of GaAs(100) surface prepared by HCl-isopropanol treatment

被引：8
|
作者：
Laukkanen, P [1 ]
Kuzmin, A [1 ]
Perälä, RE [1 ]
Vaara, RL [1 ]
Väyrynen, IJ [1 ]
机构：
[1] Univ Turku, Dept Phys, FIN-20014 Turku, Finland
来源：
APPLIED SURFACE SCIENCE | 2003年 / 206卷 / 1-4期
关键词：
gallium arsenide; scanning tunneling microscopy; HCl-isopropanol treatment;
D O I：
10.1016/S0169-4332(02)01226-6
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
In this letter, scanning tunneling microscopy (STM) is utilized to investigate surface morphology and a local atomic structure of the GaAs(I 0 0) surfaces prepared by the HCl-isopropanol (HCl-iPA) treatment and annealing in ultrahigh vacuum (UHV). Low-energy electron diffraction (LEED) reveals that the (2 x 4) reconstruction appears on the HCl-iPA treated GaAs(1 0 0) surface after an UHV annealing at 300 degreesC. According to the STM images, this (2 x 4) structure is 7 phase. Both LEED and STM suggest improvement in surface quality of the HCl-iPA GaAs(1 0 0) with increasing the annealing temperature in the range of 300-400 degreesC. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：2 / 7
页数：6
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