Scanning tunneling microscopy study of GaAs(100) surface prepared by HCl-isopropanol treatment

被引：8
|
作者：
Laukkanen, P [1 ]
Kuzmin, A [1 ]
Perälä, RE [1 ]
Vaara, RL [1 ]
Väyrynen, IJ [1 ]
机构：
[1] Univ Turku, Dept Phys, FIN-20014 Turku, Finland
来源：
APPLIED SURFACE SCIENCE | 2003年 / 206卷 / 1-4期
关键词：
gallium arsenide; scanning tunneling microscopy; HCl-isopropanol treatment;
D O I：
10.1016/S0169-4332(02)01226-6
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
In this letter, scanning tunneling microscopy (STM) is utilized to investigate surface morphology and a local atomic structure of the GaAs(I 0 0) surfaces prepared by the HCl-isopropanol (HCl-iPA) treatment and annealing in ultrahigh vacuum (UHV). Low-energy electron diffraction (LEED) reveals that the (2 x 4) reconstruction appears on the HCl-iPA treated GaAs(1 0 0) surface after an UHV annealing at 300 degreesC. According to the STM images, this (2 x 4) structure is 7 phase. Both LEED and STM suggest improvement in surface quality of the HCl-iPA GaAs(1 0 0) with increasing the annealing temperature in the range of 300-400 degreesC. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：2 / 7
页数：6
相关论文
共 50 条
  • [1] Preparation of Ga-terminated negative electron affinity-GaAs (100) surface by HCl-isopropanol treatment for nanoanalysis by scanning tunneling microscopy
    Fukuzoe, Ryutaro
    Hirao, Masayuki
    Yamanaka, Daichi
    Iwabuchi, Youta
    Iijima, Hokuto
    Meguro, Takashi
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2018, 36 (06):
  • [2] Surface passivation and morphology of GaAs(100) treated in HCl-isopropanol solution
    Alperovich, VL
    Tereshchenko, OE
    Rudaya, NS
    Sheglov, DV
    Latyshev, AV
    Terekhov, AS
    APPLIED SURFACE SCIENCE, 2004, 235 (03) : 249 - 259
  • [3] Atomic structure and electronic properties of HCl-isopropanol treated and vacuum annealed GaAs(100) surface
    Tereshchenko, OE
    Chikichev, SI
    Terekhov, AS
    APPLIED SURFACE SCIENCE, 1999, 142 (1-4) : 75 - 80
  • [4] Composition and structure of HCl-isopropanol treated and vacuum annealed GaAs(100) surfaces
    Tereshchenko, OE
    Chikichev, SI
    Terekhov, AS
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1999, 17 (05): : 2655 - 2662
  • [5] SURFACE RECONSTRUCTIONS OF GAAS(100) OBSERVED BY SCANNING TUNNELING MICROSCOPY
    BIEGELSEN, DK
    BRINGANS, RD
    NORTHRUP, JE
    SWARTZ, LE
    PHYSICAL REVIEW B, 1990, 41 (09): : 5701 - 5706
  • [6] SCANNING-TUNNELING-MICROSCOPY STUDY OF GAAS(001) SURFACE PREPARED BY DEOXYGENATED AND DEIONIZED WATER-TREATMENT
    HIROTA, Y
    FUKUDA, T
    APPLIED PHYSICS LETTERS, 1995, 66 (21) : 2837 - 2839
  • [7] SCANNING TUNNELING MICROSCOPY OF GAAS(100) SURFACES
    BIEGELSEN, DK
    BRINGANS, RD
    SWARTZ, LE
    FIRST INTERNATIONAL MEETING ON ADVANCED PROCESSING AND CHARACTERIZATION TECHNOLOGIES: FABRICATION AND CHARACTERIZATION OF SEMICONDUCTOR OPTOELECTRONIC DEVICES AND INTEGRATED CIRCUITS, VOLS 1 AND 2, 1989, : A27 - A30
  • [8] Scanning tunneling microscopy study of the anatase (100) surface
    Ruzycki, N
    Herman, GS
    Boatner, LA
    Diebold, U
    SURFACE SCIENCE, 2003, 529 (1-2) : L239 - L244
  • [9] Scanning tunneling microscopy study of the anatase (100) surface.
    Ruzycki, NJ
    Herman, GS
    Boatner, LA
    Diebold, U
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2003, 225 : U428 - U428
  • [10] Surface dihydrides on Ge(100): A scanning tunneling microscopy study
    Maeng, JY
    Lee, JY
    Cho, YE
    Kim, S
    Jo, SK
    APPLIED PHYSICS LETTERS, 2002, 81 (19) : 3555 - 3557
12345