Scanning tunneling microscopy study of GaAs(100) surface prepared by HCl-isopropanol treatment

被引：8

作者：

Laukkanen, P ^{[1
]}

Kuzmin, A ^{[1
]}

Perälä, RE ^{[1
]}

Vaara, RL ^{[1
]}

Väyrynen, IJ ^{[1
]}

机构：

[1] Univ Turku, Dept Phys, FIN-20014 Turku, Finland

来源：

APPLIED SURFACE SCIENCE | 2003年 / 206卷 / 1-4期

关键词：

gallium arsenide; scanning tunneling microscopy; HCl-isopropanol treatment;

D O I：

10.1016/S0169-4332(02)01226-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this letter, scanning tunneling microscopy (STM) is utilized to investigate surface morphology and a local atomic structure of the GaAs(I 0 0) surfaces prepared by the HCl-isopropanol (HCl-iPA) treatment and annealing in ultrahigh vacuum (UHV). Low-energy electron diffraction (LEED) reveals that the (2 x 4) reconstruction appears on the HCl-iPA treated GaAs(1 0 0) surface after an UHV annealing at 300 degreesC. According to the STM images, this (2 x 4) structure is 7 phase. Both LEED and STM suggest improvement in surface quality of the HCl-iPA GaAs(1 0 0) with increasing the annealing temperature in the range of 300-400 degreesC. (C) 2002 Elsevier Science B.V. All rights reserved.

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页码：2 / 7

页数：6

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