Development of broadband X-ray interference lithography large area exposure system

被引：9

作者：

Xue, Chaofan ^{[1
]}

Wu, Yanqing ^{[1
]}

Zhu, Fangyuan ^{[1
]}

Yang, Shumin ^{[1
]}

Liu, Haigang ^{[1
]}

Zhao, Jun ^{[1
]}

Wang, Liansheng ^{[1
]}

Tai, Renzhong ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Synchrotron Radiat Facil, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 2016年 / 87卷 / 04期

基金：

中国国家自然科学基金;

关键词：

INTERFEROMETRIC LITHOGRAPHY; HIGH-RESOLUTION; FABRICATION; ARRAYS;

D O I：

10.1063/1.4947067

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The single-exposure patterned area is about several 10(2) x 10(2) mu m(2) which is mainly decided by the mask area in multi-beam X-ray interference lithography (XIL). The exposure area is difficult to stitch to a larger one because the patterned area is surrounded by 0th diffraction exposure areas. To block the 0th diffraction beams precisely and effectively, a new large area exposure technology is developed in the Shanghai Synchrotron Radiation Facility by applying an order-sorting aperture with a new in situ monitoring scheme in the XIL system. The patterned area could be stitched readily up to several square centimeters and even bigger by this technology. Published by AIP Publishing.

引用

页数：4

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