Composition Dependence of the Band Gap Energy of Dilute Bismuth and Nitride GaN x Bi y As1-y-z Alloy (0≤ x≤ 0.05, 0≤ y≤ 0.05)

被引：9

作者：

Zhao, Chuan-Zhen ^{[1
]}

Ren, He-Yu ^{[1
,2
]}

Wei, Tong ^{[2
]}

Wang, Sha-Sha ^{[1
]}

Lu, Ke-Qing ^{[1
]}

机构：

[1] Tianjin Polytech Univ, Tianjin Key Lab Optoelect Detect Technol & Syst, Sch Elect & Informat Engn, Tianjin 300387, Peoples R China

[2] Civil Aviat Univ China, Coll Sci, Tianjin 300300, Peoples R China

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2018年 / 47卷 / 08期

基金：

中国国家自然科学基金;

关键词：

GaNxBiyAs1-x-y; N level; band gap energy; dilute nitride; MOLECULAR-BEAM EPITAXY; TEMPERATURE-DEPENDENCE; OPTICAL-PROPERTIES; GANASBI; GROWTH; GAAS; PHOTOLUMINESCENCE; GANYAS1-X-YBIX;

D O I：

10.1007/s11664-018-6317-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The band gap evolution of dilute bismuth and nitride GaN (x) Bi (y) As1-x-y alloy is analyzed. It is found that the location of the D" conduction band minimum (CBM) of GaN (x) Bi (y) As1-x-y is determined by two factors. One is the influence of the Bi content on the D" CBM of GaAs. The other is the interaction and the hybridization between the N level and the D" CBM of GaBi (y) As1-y . For the D" valence band maximum (VBM) of GaN (x) Bi (y) As1-x-y , the main factor to determine its location is the interaction and the hybridization between the Bi level and the D" VBM of GaAs. According to the physical mechanism for the band gap evolution, a model is established to depict the band gap energy of GaN (x) Bi (y) As1-x-y depending on N and Bi contents quantitatively. The results obtained using the model are consistent with the experimental data.

引用

页码：4539 / 4543

页数：5

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