Bipolar Resistive Switching of an Al/ZnO/Ti-based Memristor

被引：0

作者：

Alizadeh, Armin ^{[1
]}

Hossein-Babaei, Faramarz ^{[1
]}

机构：

[1] KN Toosi Univ Technol, Elect Engn Dept, Tehran, Iran

来源：

2019 27TH IRANIAN CONFERENCE ON ELECTRICAL ENGINEERING (ICEE 2019) | 2019年

关键词：

Memristor; Zinc oxide; Metal/metal oxide interface; Oxygen vacancies; Resistive switching; MEMORY;

D O I：

10.1109/iraniancee.2019.8786428

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Devices with metal-metal oxide-metal structure have been shown to present nonlinear transport properties. Here, the Al/ZnO/Ti structure is investigated for its memristive switching behavior. The I-V measurements carried out at different voltage sweeping frequencies showed drastic changes with frequency, particularly at very low frequencies (below 1 Hz). The observations point to the importance of ionic motion in the observed switching effect. The significance of oxygen vacancies in this regards is clarified. Results suggest that the oxygen deficiency is responsible for the switching mechanism. The presented model describe the observed phenomena.

引用

页码：367 / 370

页数：4

共 25 条

[1] ZnO Schottky barriers and Ohmic contacts [J].

Brillson, Leonard J. ;

Lu, Yicheng .

JOURNAL OF APPLIED PHYSICS, 2011, 109 (12)

[2] Bipolar resistive switching with self-rectifying effects in Al/ZnO/Si structure [J].

Chen, C. ;

Pan, F. ;

Wang, Z. S. ;

Yang, J. ;

Zeng, F. .

JOURNAL OF APPLIED PHYSICS, 2012, 111 (01)

[3] Plasmon enhancement of bulk heterojunction organic photovoltaic devices by electrode modification [J].

Chen, Xiaohong ;

Zhao, Chunchang ;

Rothberg, Lewis ;

Ng, Man-Kit .

APPLIED PHYSICS LETTERS, 2008, 93 (12)

[4] Bipolar resistive switching and conduction mechanism of an Al/ZnO/Al-based memristor [J].

Gul, Fatih ;

Efeoglu, Hasan .

SUPERLATTICES AND MICROSTRUCTURES, 2017, 101 :172-179

[5] Flexible resistive switching bistable memory devices using ZnO nanoparticles embedded in polyvinyl alcohol (PVA) matrix and poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) [J].

Hmar, Jehova Jire L. .

RSC ADVANCES, 2018, 8 (36) :20423-20433

[6] The energy barrier at noble metal/TiO2 junctions [J].

Hossein-Babaei, F. ;

Lajvardi, Mehdi M. ;

Alaei-Sheini, Navid .

APPLIED PHYSICS LETTERS, 2015, 106 (08)

[7] Electrical Resistance and Seebeck Effect in Undoped Polycrystalline Zinc Oxide [J].

Hossein-Babaei, F. ;

Masoumi, S. .

MATERIALS AND APPLICATIONS FOR SENSORS AND TRANSDUCERS III, 2014, 605 :185-188

[8] Growth of ZnO nanorods on the surface and edges of a multilayer graphene sheet [J].

Hossein-Babaei, Faramarz ;

Akbari-Saatlu, Mehdi .

SCRIPTA MATERIALIA, 2017, 139 :77-82

[9] The ohmic contact between zinc oxide and highly oriented pyrolytic graphite [J].

Hossein-Babaei, Faramarz ;

Alaei-Sheini, Navid ;

Jahangiri, Mojtaba .

MATERIALS LETTERS, 2017, 192 :52-55

[10] Electronic Conduction in Ti/Poly-TiO2/Ti Structures [J].

Hossein-Babaei, Faramarz ;

Alaei-Sheini, Navid .

SCIENTIFIC REPORTS, 2016, 6

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