Soft X-ray optimization studies on a dense plasma focus device operated in neon and argon in repetitive mode

被引:86
作者
Wong, D [1 ]
Patran, A [1 ]
Tan, TL [1 ]
Rawat, RS [1 ]
Lee, P [1 ]
机构
[1] Nanyang Technol Univ, Natl Inst Educ, Singapore 637616, Singapore
关键词
argon; neon; plasma focus; resists; X-ray lithography; X-rays;
D O I
10.1109/TPS.2004.838596
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 ; 080103 ; 080704 ;
摘要
This paper investigates the emission characteristics of a high-performance low-energy (3-kJ) repetitive dense plasma focus device, NX2, operated at up to 1-Hz repetition rate to develop it as an intense source of soft X-rays (SXR) for microlithography and micromachining. Various SXR yield optimization studies with argon and neon as filling gases were performed under different operating conditions (charging voltage, filling pressure, anode length, and insulator sleeve length). The SXR yield was computed using signals obtained from a PIN diode SXR spectrometer with appropriate filters. When operated in neon, the average optimum SXR (lambda similar to 1 nm) yield in 4pi steradians was found to be up to 140 J/shot, which corresponded to a wall plug efficiency of 5.6%. Operation in argon showed that optimized SXR (lambda similar to 0.4 nm.) yield was up to 1.3 J/shot. While operating with neon under optimized conditions with a water-cooled anode in repetitive mode, the NX2 device was used as a SXR source to imprint a test lithograph on a highly sensitive chemically-amplified resist SU-8. Test structures showing the effect of a stepper with aspect ratio 3:1 on 10-mum-thick SU-8 resist film were obtained.
引用
收藏
页码:2227 / 2235
页数:9
相关论文
共 28 条
[1]  
[Anonymous], 2002, INTEL TECHNOLOGY J
[2]   Study of x-ray emission from a table top plasma focus and its application as an x-ray backlighter [J].
Beg, FN ;
Ross, I ;
Lorenz, A ;
Worley, JF ;
Dangor, AE ;
Haines, MG .
JOURNAL OF APPLIED PHYSICS, 2000, 88 (06) :3225-3230
[3]  
Bing S., 2000, THESIS NANYANG TU SI
[4]   Resists for next generation lithography [J].
Brainard, RL ;
Barclay, GG ;
Anderson, EH ;
Ocola, LE .
MICROELECTRONIC ENGINEERING, 2002, 61-2 :707-715
[5]  
BURKHALTER PG, 1992, REV SCI INSTRUM, V63, P10
[6]  
GATES DC, 1978, ENERGY STORAGE COMPR, V2, P329
[7]   Operation of NX2 dense plasma focus device with argon filling as a possible radiation source for micro-machining [J].
Gribkov, VA ;
Srivastava, A ;
Keat, PLC ;
Kudryashov, V ;
Lee, S .
IEEE TRANSACTIONS ON PLASMA SCIENCE, 2002, 30 (03) :1331-1338
[8]   X-RAY INTERACTIONS - PHOTOABSORPTION, SCATTERING, TRANSMISSION, AND REFLECTION AT E=50-30,000 EV, Z=1-92 [J].
HENKE, BL ;
GULLIKSON, EM ;
DAVIS, JC .
ATOMIC DATA AND NUCLEAR DATA TABLES, 1993, 54 (02) :181-342
[9]  
HUBA JD, 2002, NRL PLASMA FORMULARY, P47
[10]   Chemical amplification resists: History and development within IBM [J].
Ito, H .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1997, 41 (1-2) :69-80