Analysis of carrier capture and escape in InGaAsP/InP quantum well lasers

被引：1
|
作者：
Plyavenek, AG [1 ]
Lyubarskii, AV [1 ]
机构：
[1] MOSCOW INST RADIO ENGN ELECT & AUTOMAT,UNITED OPTOELECT LAB,MOSCOW 117454,RUSSIA
来源：
15TH IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE - CONFERENCE DIGEST | 1996年
关键词：
D O I：
10.1109/ISLC.1996.553767
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：101 / 102
页数：2
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