Optimize IMD in high-power bipolar amps

被引：0
|
作者：
Antepyan, R
机构：
来源：
MICROWAVES & RF | 1996年 / 35卷 / 02期
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
SIGNAL distortion is strongly dependent on the choice of biasing circuitry for NPN power transistors that operate in Class AB mode. The filter networks at the transistor's base and collector determine the amplifier's operating bandwidth, gain flatness, input/output matching, and operating bias point. When designing these networks, care must be taken to avoid unwanted oscillations and possible device destruction.
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页码：79 / &
页数：3
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