Normally-off GaN-MISFET with well-controlled threshold voltage

被引：23

作者：

Kuraguchi, Masahiko

Takada, Yoshiharu

Suzuki, Takashi

Hirose, Mayumi

Tsuda, Kunio

Saito, Wataru

Saito, Yasunobu

Omura, Ichiro

机构：

[1] Toshiba Co Ltd, Corp R&D Ctr, Saiwai Ku, Kawasaki, Kanagawa 2128582, Japan

[2] Toshiba Co Ltd, Semicond Co, Saiwai Ku, Kawasaki, Kanagawa 2128582, Japan

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2007年 / 204卷 / 06期

关键词：

MODE ALGAN/GAN HEMTS; SUBSTRATE;

D O I：

10.1002/pssa.200674720

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A new device structure with four epitaxial layers and a recessed gate is proposed for normally-off operation in GaN-FETs. Employment of this structure makes it possible to control accurately the threshold voltage without accurate control of recess etching depth. The high breakdown voltage and the low on-resistance of the fabricated devices are also reported. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2010 / 2013

页数：4

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