Functional Group-induced p-Doping of MoS2 by Titanium(IV) Bis(ammonium lactato) Dihydroxide Physisorption

被引:6
作者
Liu, Yeru [1 ]
Wang, Guangzhao [2 ,5 ]
Luo, Fang [3 ]
Li, Huimin [1 ]
Zhu, Mengjian [3 ]
Liu, Xiaochi [4 ]
Yang, Shengyuan A. [5 ]
Liu, Song [1 ]
机构
[1] Hunan Univ, Coll Chem & Chem Engn, Inst Chem Biol & Nanomed ICBN, State Key Lab Chemo Biosensing & Chemometr, Changsha 410082, Peoples R China
[2] Yangtze Normal Univ, Sch Elect Informat Engn, Key Lab Extraordinary Bond Engn & Adv Mat Technol, Chongqing 408100, Peoples R China
[3] Natl Univ Def Technol, Coll Adv Interdisciplinary Studies, Changsha 410073, Peoples R China
[4] Cent South Univ, Sch Phys & Elect, Hunan Key Lab Super Microstruct & Ultrafast Proc, Changsha 410083, Peoples R China
[5] Singapore Univ Technol & Design, Res Lab Quantum Mat, Singapore 487372, Singapore
基金
中国国家自然科学基金;
关键词
MoS2; TALH; p-type doping; functional group; field-effect transistor; TRANSITION-METAL DICHALCOGENIDES; FEW-LAYER MOS2; ELECTRONICS;
D O I
10.1002/asia.202100300
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
P-type doping is of critical importance for the realization of certain high-performance electrical and optoelectronic devices based on molybdenum disulfide (MoS2). Charge transfer doping is a feasible strategy for tuning the conductance properties via facile treatment. In this work, the electrical properties of few-layer MoS2 were modulated with titanium(IV) bis(ammonium lactato) dihydroxide molecules (denoted as TALH) via physisorption. The functional groups such as electronegative hydroxyl (-OH) and carboxylate groups (-COO) included in TALH molecules are expected to induce p-doping effect through surface charge transfer when being attached to MoS2. The p-doping is proved by X-ray photoelectron spectroscopy (XPS) with the downshift of Mo 3d and S 2p peaks. Control experiments and density functional theory calculations validate that the p-type doping mainly originated from the -OH group in TALH, which drew electrons from MoS2. These results suggest that functional group-mediated p-doping effect show a path to modulate the carrier transition in MoS2, and enrich the molecule series for device modification.
引用
收藏
页码:1756 / 1761
页数:6
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