Effect of Carrier Gas Flow Field on Chemical Vapor Deposition of 2D MoS2 Crystal

被引：8

作者：

Bai, Minyu ^{[1
]}

Wen, Shuai ^{[1
]}

Zhao, Jijie ^{[1
]}

Du, Yuxuan ^{[1
]}

Xie, Fei ^{[1
]}

Liu, Huan ^{[1
]}

机构：

[1] Xian Technol Univ, Sch Optoelect Engn, Xian 710021, Peoples R China

来源：

COATINGS | 2021年 / 11卷 / 05期

基金：

中国国家自然科学基金;

关键词：

carrier gas; flow field; chemical vapor deposition; 2D MoS2; GROWTH; GRAPHENE; MONOLAYER; ENERGY; MODEL; SIO2;

D O I：

10.3390/coatings11050547

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The carrier gas flow field plays a vital role in the chemical vapor deposition (CVD) process of two dimensional (2D) MoS2 crystal, which was studied by simulations and experiments. Different carrier gas flow fields were studied by utilizing three types of precursor carrier which affected the local gas flow field significantly. The experiment results showed that the appropriate precursor vapor concentration could be achieved by local carrier gas flow field conditioning, resulting in single 2D MoS2 crystals of a large size and a high coating rate of 2D MoS2 crystal on the target substrate surface. The carrier gas flow also contributed to the growth of the 2D MoS2 crystal when it flew towards the target surface. The size of deposited single 2D MoS2 crystal reached tens of micrometers and a few layers of 2D MoS2 crystal were characterized and confirmed.

引用

页数：9

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