Density-controlled growth of well-aligned ZnO nanowires using chemical vapor deposition

被引：1

作者：

Wu ZhiMing ^{[1
]}

Lin XianGan ^{[1
]}

Huang Kai ^{[1
]}

Li ShuPing ^{[1
]}

Kang JunYong ^{[1
]}

机构：

[1] Xiamen Univ, Dept Phys, Key Lab Semiconduct & Applicat, Xiamen 361005, Peoples R China

来源：

SCIENCE CHINA-TECHNOLOGICAL SCIENCES | 2010年 / 53卷 / 03期

基金：

中国国家自然科学基金;

关键词：

density-controlled; ZnO nanowires; thermal evaporation; PHOTOLUMINESCENCE; NANOBELTS;

D O I：

10.1007/s11431-010-0035-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Well-aligned ZnO nanowires were grown on Si substrate by chemical vapor deposition. The experimental results showed that the density of nanowires was related to the heating process and growth temperature. High-density ZnO nanowires were obtained under optimal conditions. The growth mechanism of the ZnO nanowires was presented as well.

引用

页码：766 / 768

页数：3

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