Lasing characteristics of InGaAs/InGaAsP multiple-quantum-well optical thyristor operating at 1.561 μm

被引：5

作者：

Kim, DG

Lee, HH

Choi, WK

Choi, YW

Lee, S

Woo, DH

Byun, YT

Kim, JH

Kim, SH

Nakano, Y

机构：

[1] Chung Ang Univ, Sch Elect & Elect Engn, Optoelect & Opt Commun Lab, Seoul 156756, South Korea

[2] Korea Inst Sci & Technol, Photon Res Ctr, Seoul 130650, South Korea

[3] Univ Tokyo, Dept Elect Engn, Bunkyo Ku, Tokyo 1138656, Japan

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 02期

关键词：

D O I：

10.1063/1.1536711

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a demonstration of a waveguide-type depleted optical thyristor laser diode with InGaAs/InGaAsP multiple-quantum-well structure. The measured switching voltage and current are 4.63 V and 10 muA, respectively. The holding voltage and current are, respectively, 0.59 V and 20 muA. The lasing threshold currents at 25 degreesC and 10 degreesC are 111 mA and 72.5 mA, respectively. The lasing wavelength is centered at 1.561 mum at a bias current equal to 1.41 times threshold. (C) 2003 American Institute of Physics.

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页码：158 / 160

页数：3

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