Effect of electron irradiation on the surface properties of Ge-Si single crystals

被引：0

作者：

Bakirov, MY ^{[1
]}

Ibragimov, NI ^{[1
]}

机构：

[1] Azerbaijan Acad Sci, Abdullaev Inst Phys, Dept Radiat Res, Baku 370143, Azerbaijan

来源：

INORGANIC MATERIALS | 1998年 / 34卷 / 05期

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electron irradiation of Ge1-xSix(x = 0-0.15) single crystals to a dose of less than or equal to 10(13) cm(-2) has no influence on the density of charged surface centers (N-t = 4 x 10(17) cm(-2)). At higher doses, N-t first decreases slightly and then saturates. Irradiation with a dose of 10(16) cm(-2) at 300 degrees C gives rise to dislocation climb. The dislocation climb length first rises with increasing dose and then saturates, as does the rate of surface recombination. The surface recombination rate was found to rise monotonically with dislocation density.

引用

页码：419 / 421

页数：3