Correlation between deposition parameters and structural modification of amorphous carbon nitride (a-CNx) film in magnetron sputtering

被引:16
作者
Jung, HS [1 ]
Park, HH [1 ]
机构
[1] Yonsei Univ, Dept Ceram Engn, Seodaemun Ku, Seoul 120749, South Korea
关键词
carbon nitride (CNx); rf magnetron sputtering; structural modification;
D O I
10.1016/S0169-4332(03)00507-5
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The growth and structural evolution of the carbon nitride (CNx) film, deposited by rf magnetron sputtering in Ar/N-2 discharge, were studied. The CNx (0.23 less than or equal to x less than or equal to 0.71) films were deposited on Si(1 0 0) at rf power between 50 and 250 W. Simultaneously, Ar/N-2 gas ratio was varied from 0 to 18 with total pressure kept at 6.6 x 10(-1) Pa. The composition, structure, and chemical bonding configuration of the CNx films were found to be strongly dependent on deposition parameters (rf power and Ar/N-2 gas ratio). Based on these results, a relationship between deposition parameter and film properties ([N]/[C] ratio, surface roughness, and sp(3)/sp(2) bond ratio) was established. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:149 / 155
页数:7
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