A novel lead-free and high-performance barium strontium titanate-based thin film capacitor with ultrahigh energy storage density and giant power density

被引:55
作者
Fan, Yuzhu [1 ,2 ]
Zhou, Zhiyong [1 ]
Chen, Ying [1 ]
Huang, Wei [1 ]
Dong, Xianlin [1 ,3 ,4 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[3] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
[4] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, 1295 Dingxi Rd, Shanghai 200050, Peoples R China
基金
中国国家自然科学基金;
关键词
CHARGE-DISCHARGE PERFORMANCES; DIELECTRIC-BREAKDOWN STRENGTH; HIGH-EFFICIENCY; THERMAL-STABILITY; CERAMICS; TEMPERATURE; MICROSTRUCTURE; BEHAVIOR;
D O I
10.1039/c9tc04036f
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
High-performance lead-free film capacitors with simultaneously large energy storage density and high power density are strongly demanded in applications. Here, a novel relaxor-ferroelectric 0.88Ba(0.55)Sr(0.45)TiO(3)-0.12BiMg(2/3)Nb(1/3)O(3) (BST-BMN) thin film capacitor was obtained with an ultrahigh recoverable energy storage density (W-rec) of similar to 86 J cm(-3) and high efficiency of similar to 73% under the dielectric breakdown strength of 5 MV cm(-1). In addition, the investigated thin film capacitor exhibited an excellent fatigue resistance property with the W-rec variation less than similar to 2% after 10(7) cycles. More importantly, a considerable power density of similar to 208 MW cm(-3) was obtained in BST-BMN thin film capacitors, which is superior to many other thin film capacitors. These remarkable performances should be attributed to the simultaneously enhanced BDS and relaxor behavior through the incorporation of non-isovalent ions. These results qualify the environment-benign BST-BMN thin films as promising candidates for energy storage applications and promote the development of BST-based film capacitors with enhanced W-rec in the future.
引用
收藏
页码:50 / 57
页数:8
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