A comprehensive model for PMOS NBTI degradation: Recent progress

被引：213
作者：
Alam, M. A. [1 ]
Kufluoglu, H.
Varghese, D.
Mahapatra, S.
机构：
[1] Purdue Univ, W Lafayette, IN 47906 USA
[2] Indian Inst Technol, Dept Elect Engn, Bombay 400076, Maharashtra, India
来源：
MICROELECTRONICS RELIABILITY | 2007年 / 47卷 / 06期
基金：
美国国家科学基金会;
关键词：
BIAS TEMPERATURE INSTABILITY; TRAP GENERATION; INTERFACE; RECOVERY; IMPACT; SIO2;
D O I：
10.1016/j.microrel.2006.10.012
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Negative bias temperature instability (NBTI) is a well-known reliability concern for PMOS transistors. We review the literature to find seven key experimental features of NBT1 degradation. These features appear mutually inconsistent and have often defied easy interpretation. By reformulating the Reaction-Diffusion model in a particularly simple form, we show that these seven apparently contradictory features of NBTI actually reflect different facets of the same underlying physical mechanism. (c) 2006 Elsevier Ltd. All rights reserved.
引用
收藏
页码：853 / 862
页数：10
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