100 J-level nanosecond pulsed diode pumped solid state laser

被引:73
作者
Banerjee, Saumyabrata [1 ]
Mason, Paul D. [1 ]
Ertel, Klaus [1 ]
Phillips, P. Jonathan [1 ]
De Vido, Mariastefania [1 ]
Chekhlov, Oleg [1 ]
Divoky, Martin [2 ]
Pilar, Jan [2 ]
Smith, Jodie [1 ]
Butcher, Thomas [1 ]
Lintern, Andrew [1 ]
Tomlinson, Steph [1 ]
Shaikh, Waseem [1 ]
Hooker, Chris [1 ]
Lucianetti, Antonio [2 ]
Hernandez-Gomez, Cristina [1 ]
Mocek, Tomas [2 ]
Edwards, Chris [1 ]
Collier, John L. [1 ]
机构
[1] STFC Rutherford Appleton Lab, Cent Laser Facil, Didcot OX11 0QX, Oxon, England
[2] Inst Phys CAS, HiLASE Ctr, Za Radnici 828, Dolni Brezany 25241, Czech Republic
关键词
HIGH AVERAGE POWER; EFFICIENCY; AMPLIFIER;
D O I
10.1364/OL.41.002089
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We report on the successful demonstration of a 100 J-level, diode pumped solid state laser based on cryogenic gas cooled, multi-slab ceramic Yb:YAG amplifier technology. When operated at 175 K, the system delivered a pulse energy of 107 J at a 1 Hz repetition rate and 10 ns pulse duration, pumped by 506 J of diode energy at 940 nm, corresponding to an optical-to-optical efficiency of 21%. To the best of our knowledge, this represents the highest energy obtained from a nanosecond pulsed diode pumped solid state laser. This demonstration confirms the energy scalability of the diode pumped optical laser for experiments laser architecture. (C) 2016 Optical Society of America
引用
收藏
页码:2089 / 2092
页数:4
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