Ferromagnetic ordering in a THAB exfoliated WS2 nanosheet

被引:9
作者
Debnath, Anup [1 ]
Shaw, Bikash Kumar [2 ]
Bhattacharya, Shatabda [3 ]
Saha, Shyamal K. [1 ]
机构
[1] Indian Assoc Cultivat Sci, Sch Mat Sci, Kolkata 700032, India
[2] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB3 0FS, England
[3] Seoul Natl Univ, Dept Mat Sci & Engn, Natl Creat Res Initiat Ctr Spin Dynam & Spin Wave, Nanospin Lab, Seoul 08826, South Korea
关键词
WS2; 2D ferromagnet; electrochemical-exfoliation; THAB intercalation; Mott-VRH; spintronic-material; ELECTRICAL-TRANSPORT PROPERTIES; LARGE-AREA; MOS2; DEFECTS; UNIFORM; LAYERS;
D O I
10.1088/1361-6463/abe331
中图分类号
O59 [应用物理学];
学科分类号
摘要
Because of the important role of two-dimensional (2D) magnetic semiconductors in low-dimensional spintronic devices, the generation of ferromagnetism within an ultrathin semiconducting sheet of a transition metal dichalcogenide is highly desirable. A pristine WS2 sheet is a diamagnetic semiconducting transition metal dichalcogenide with superior electronic properties. In this study, we synthesised a free-standing WS2 sheet by a chemical route followed by electrochemical exfoliation by a giant molecule. During exfoliation of the WS2 crystal, atomic vacancies were created in the sheet with a lower number of layers. To understand the mechanism of exfoliation, we carried out x-ray diffraction, transmission electron microscopy, atomic force microscopy and Raman measurements. The types of atomic vacancies were realised by energy-dispersive x-ray spectroscopy, high-resolution transmission electron microscopy (fast Fourier transform), and x-ray photoelectron spectroscopy studies. We also observed a ferromagnetic ordering within the exfoliated WS2 sheet, which is explained on the basis of the generation of an atomic vacancy induced spin-moment. The transport study of the exfoliated WS2 sheet suggests that the electro-transport behaviour still remains as a semiconductor even after exfoliation. This ferromagnetic semiconducting system will be applicable in spintronic devices and this technique will enrich the literature, particularly for the preparation of a 2D semiconducting ferromagnet in a facile fashion.
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页数:12
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