Photoluminescence from Si nanocrystals embedded in In2O3/SiO2 glass thin films

被引：2
|
作者：
Matsumoto, Kimihisa [1 ]
Fujii, Minoru
Hayashi, Shinji
机构：
[1] Kobe Univ, Grad Sch Sci & Technol, Kobe, Hyogo 6578501, Japan
[2] Kobe Univ, Fac Engn, Dept Elect & Elect Engn, Kobe, Hyogo 6578501, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2007年 / 46卷 / 4A期
关键词：
Si nanocrystals; decay; indium;
D O I：
10.1143/JJAP.46.1779
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The photoluminescence (PL) properties of Si nanocrystals embedded in In2O3/SiO2 thin films are studied. The PL properties strongly depend on In and excess Si concentrations. For the samples with an excess Si concentration larger than 3.4 at. %, the PL intensity increases as In concentration increases up to 0.46 at. %, while the PL decay rate is nearly constant. This suggests that the number of Si nanocrystals contributing to the PL increases. On the other hand, when the excess Si concentration is low (1.4 at. %), the PL intensity monotonically decreases with increasing In concentration. The decrease in the PL intensity is accompanied by the increase in a decay rate, indicating that the nonradiative recombination process is introduced by In doping.
引用
收藏
页码：1779 / 1782
页数：4
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