Extending the Lifetime of Object-based NAND Flash Device with STT-RAM/DRAM Hybrid Buffer

被引:0
|
作者
Min, Chuhan [1 ]
Guo, Jie [1 ]
Li, Hai [1 ]
Chen, Yiran [1 ]
机构
[1] Univ Pittsburgh, Dept Elect & Comp Engn, Pittsburgh, PA 15260 USA
来源
2017 22ND ASIA AND SOUTH PACIFIC DESIGN AUTOMATION CONFERENCE (ASP-DAC) | 2017年
基金
美国国家科学基金会;
关键词
NAND flash memories; hybrid buffer; object-based interface;
D O I
暂无
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
A major limitation of NAND flash memory is erase-before-program characteristics. It incurs write amplification, severely degrading system performance and endurance. Previous works reveal that metadata update substantially contributes to write amplification in object-based NAND flash device (ONFD). To further reduce the overhead of metadata update in ONFD, we propose a hybrid buffer scheme (HBS) by utilizing the lower latency and byte-addressable characteristics of the promising emerging non-volatile memory STT-RAM. Our HBS proposes to store ONFD metadata with highest cost in a complement STT-RAM buffer to reduce write amplification. Considering limited size of STT-RAM, we propose a hybrid buffer management technique to maximize effective memory utilization. In addition, by leveraging non-volatility of STT-RAM, our HBS can also substantially reduce data recovery overhead and complexity upon power failure. Experiment results show that the proposed design can achieve up to 15% performance improvement with average 34% endurance extension compared to the state-of-the-art works.
引用
收藏
页码:764 / 769
页数:6
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