Fabrication and Characteristics of Fully Transparent Aluminum-doped Zinc Oxide Thin-Film Transistors

被引：0

作者：

Shan, Dongfang ^{[1
,2
]}

Han, Dedong ^{[1
]}

Huang, Fuqing ^{[1
,2
]}

Tian, Yu ^{[1
]}

Zhang, Suoming ^{[1
,2
]}

Cong, Yingying ^{[1
]}

Wang, Yi ^{[1
]}

Liu, Lifeng ^{[1
]}

Zhang, Xing ^{[1
]}

Zhang, Shengdong ^{[2
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing, Peoples R China

[2] Peking Univ, Shenzhen Grad Sch, Shenzhen, Peoples R China

来源：

2013 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2013年

关键词：

Aluminum-doped Zinc Oxide; Fully transparent; Thin-film transistors; Post-annealing;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Fully transparent Aluminum-doped zinc oxide (AZO) thin-film transistors (TFTs) were fabricated using radio frequency sputtering at room temperature. To ensure transparency, the AZO-TFTs were fabricated on glass substrate, with SiO2 as gate insulator. Indium tin oxide (ITO) was adopted as gate and source/drain electrodes. The electrical characteristics of AZO-TFT were investigated by I-DS-V-DS and I-DS-V-GS measurements, excellent electrical properties were obtained. Furthermore, we researched the post-annealing effects on characteristics of AZO-TFT.

引用

页数：2

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