Ferromagnetic GaMnAs for spintronic devices

被引：0

作者：

Koeder, A ^{[1
]}

Schoch, W ^{[1
]}

Frank, S ^{[1
]}

Kling, R ^{[1
]}

Oettinger, M ^{[1
]}

Avrutin, V ^{[1
]}

Limmer, W ^{[1
]}

Sauer, R ^{[1
]}

Waag, A ^{[1
]}

机构：

[1] Univ Ulm, Abt Halbleiterphys, D-89069 Ulm, Germany

来源：

10TH INTERNATIONAL SYMPOSIUM ON NANOSTRUCTURES: PHYSICS AND TECHNOLOGY | 2003年 / 5023卷

关键词：

GaMnAs; LT MBE; ferromagnetism; spin injection; interband tunneling;

D O I：

10.1117/12.514534

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Ferromagnetic Ga1-xMnxAs films containing up to 5.1 at %Mn were grown by low-temperature MBE. The structural, electrical, and magnetic properties of the layers are reported. At x > 0.01, the materials show a ferromagnetic behavior. The Curie temperature reaches 80 K at 5.1at% Mn. We propose the use of a n(+)-GaAs/p(+)-GaMnAs Esaki-diode (ferromagnetic Esaki-diode, FED) to provide injection of spin-polarized electrons via interband tunneling. Under reverse bias, spin-polarized electrons at the Fermi level in the valence band of GaMnAs tunnel to the conduction band of GaAs in contrast to the injection of spin-polarized holes used before.

引用

页码：469 / 471

页数：3

共 7 条

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