A metal-free cathode for organic semiconductor devices

被引：243

作者：

Parthasarathy, G ^{[1
]}

Burrows, PE ^{[1
]}

Khalfin, V ^{[1
]}

Kozlov, VG ^{[1
]}

Forrest, SR ^{[1
]}

机构：

[1] Princeton Univ, Dept Elect Engn, Ctr Photon & Optoelect Mat POEM, Princeton Mat Inst, Princeton, NJ 08544 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 17期

关键词：

D O I：

10.1063/1.121301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We introduce a class of low-reflectivity, high-transparency, nonmetallic cathodes useful for a wide range of electrically active, transparent organic devices. The metal-free cathode employs a thin film of copper phthalocyanine (CuPc) capped with a film of low-power, radio-frequency sputtered indium tin oxide (ITO). The CuPc prevents damage to the underlying organic layers during the ITO sputtering process. We present a model suggesting that damage-induced states at the cathode/organic film interface are responsible for the electron injection properties of the contact. Due to the low contact reflectivity, a non-antireflection-coated, metal-free transparent organic light-emitting device (MF-TOLED) is demonstrated with 85% transmission in the visible, emitting nearly identical amounts of light in the forward and backscattered directions. The MF-TOLED performance is found to be comparable to that of conventional TOLEDs employing a more reflective and absorptive cathode consisting of a semitransparent thin film of Mg:Ag capped with ITO. (C) 1998 American Institute of Physics.

引用

页码：2138 / 2140

页数：3

共 15 条

[1]

Bulovic V, 1997, APPL PHYS LETT, V70, P2954, DOI 10.1063/1.119260

[2] Transparent light-emitting devices [J].