Quasi-particle cryotron - a switching device

被引：0

作者：

Shaternik, VY ^{[1
]}

Stepurenko, YI ^{[1
]}

Rudenko, EM ^{[1
]}

机构：

[1] GV Kurdyumov Metphys Inst, UA-03680 Kiev, Ukraine

来源：

METALLOFIZIKA I NOVEISHIE TEKHNOLOGII | 2000年 / 22卷 / 09期

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Quasi-particle cryotron is created on the basis of the superconducting tunnel junction. If is investigated as a switching device. It is obtained that cryotron power-gain modulus can be done more than unit at least.

引用

页码：3 / 7

页数：5

共 11 条

[1] TUNNELING BETWEEN SUPERCONDUCTORS IN VORTEX STATE [J].

BAND, WT ;

DONALDSON, GB .

PHYSICAL REVIEW LETTERS, 1973, 31 (01) :20-22

[2]

BARONE A, 1984, EFFEKT DZHOZEFSONA F

[3] THE FLUX-LINE-LATTICE IN SUPERCONDUCTORS [J].

BRANDT, EH .

REPORTS ON PROGRESS IN PHYSICS, 1995, 58 (11) :1465-1594

[4] Single-electron transistor logic [J].

Chen, RH ;

Korotkov, AN ;

Likharev, KK .

APPLIED PHYSICS LETTERS, 1996, 68 (14) :1954-1956

[5] TUNNELING BETWEEN THIN-FILM SUPERCONDUCTORS CONTAINING SINGLE FLUX VORTICES [J].

FULTON, TA ;

HEBARD, AF ;

DUNKLEBERGER, LN ;

EICK, RH .

SOLID STATE COMMUNICATIONS, 1977, 22 (08) :493-496

[6]

KUPRIYANOV MY, 1999, PHYSICA C, V30, P9395

[7] JOSEPHSON JUNCTION WITH LATERAL INJECTION AS A VORTEX TRANSISTOR [J].

LIKHAREV, KK ;

SEMENOV, VK ;

SNIGIREV, OV ;

TODOROV, BN .

IEEE TRANSACTIONS ON MAGNETICS, 1979, 15 (01) :420-423

[8]

MANHART J, 1995, SUPERCOND SCI TECH, V9, P49

[9] NEUROMORPHIC ELECTRONIC SYSTEMS [J].

MEAD, C .

PROCEEDINGS OF THE IEEE, 1990, 78 (10) :1629-1636

[10]

Petty M.C., 1995, INTRO MOL ELECT, DOI DOI 10.1021/ja053200p

← 1 2 →