Altering the luminescence properties of self-assembled quantum dots in GaAs by focused ion beam implantation

被引：3

作者：

Rothfuchs, Charlotte ^{[1
]}

Kukharchyk, Nadezhda ^{[1
]}

Greff, Markus K. ^{[1
]}

Wieck, Andreas D. ^{[1
]}

Ludwig, Arne ^{[1
]}

机构：

[1] Ruhr Univ Bochum, Lehrstuhl Angew Festkorperphys, D-44780 Bochum, Germany

来源：

APPLIED PHYSICS B-LASERS AND OPTICS | 2016年 / 122卷 / 03期

关键词：

PHOTONS; GROWTH;

D O I：

10.1007/s00340-015-6305-8

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Using quantum dots (QDs) as single-photon sources draws the attention in many quantum communication technologies. One pathway towards manufacturing single-photon sources is focused ion beam (FIB) implantation in molecular beam epitaxy-grown QD samples to disable all QDs around an intentional one for single photoluminescence (PL) emission. In this paper, we investigate the lattice disorders in the vicinity of InAs/GaAs QDs introduced by FIB implantation of gallium and indium ions. For high fluences, we achieve total elimination of the QDs photoluminescence. The impact of the different ion species and fluences is studied by low-temperature PL measurements. Furthermore, we deduce a simple model based on the trapassisted recombination for the description of the degradation of the PL emission. It allows the determination of the fluences at which the PL emission is suppressed. Moreover, we identify the implantation-induced non-radiative defects by temperature-dependent PL measurements.

引用

页数：6

共 30 条

[1] Quantum-dot optoelectronic devices [J].

Bhattacharya, Pallab ;

Mi, Zetian .

PROCEEDINGS OF THE IEEE, 2007, 95 (09) :1723-1740

[2]

Bimberg D, 2008, NANOSCI TECHNOL, P1, DOI 10.1007/978-3-540-77899-8

[3] Thermally activated carrier transfer and luminescence line shape in self-organized InAs quantum dots [J].

Brusaferri, L ;

Sanguinetti, S ;

Grilli, E ;

Guzzi, M ;

Bignazzi, A ;

Bogani, F ;

Carraresi, L ;

Colocci, M ;

Bosacchi, A ;

Frigeri, P ;

Franchi, S .

APPLIED PHYSICS LETTERS, 1996, 69 (22) :3354-3356

[4] Deep level defects in proton radiated GaAs grown on metamorphic SiGe/Si substrates [J].

Gonzalez, M. ;

Andre, C. L. ;

Walters, R. J. ;

Messenger, S. R. ;

Warner, J. H. ;

Lorentzen, J. R. ;

Pitera, A. J. ;

Fitzgerald, E. A. ;

Ringel, S. A. .

JOURNAL OF APPLIED PHYSICS, 2006, 100 (03)

[5]

Greff M.K., 2014, THESIS RUHR U BOCHUM

[6] In situ electron-beam lithography of deterministic single-quantum-dot mesa-structures using low-temperature cathodoluminescence spectroscopy [J].

Gschrey, M. ;

Gericke, F. ;

Schuessler, A. ;

Schmidt, R. ;

Schulze, J. -H. ;

Heindel, T. ;

Rodt, S. ;

Strittmatter, A. ;

Reitzenstein, S. .

APPLIED PHYSICS LETTERS, 2013, 102 (25)

[7] Probing Single-Charge Fluctuations at a GaAs/AlAs Interface Using Laser Spectroscopy on a Nearby InGaAs Quantum Dot [J].

Houel, J. ;

Kuhlmann, A. V. ;

Greuter, L. ;

Xue, F. ;

Poggio, M. ;

Gerardot, B. D. ;

Dalgarno, P. A. ;

Badolato, A. ;

Petroff, P. M. ;

Ludwig, A. ;

Reuter, D. ;

Wieck, A. D. ;

Warburton, R. J. .

PHYSICAL REVIEW LETTERS, 2012, 108 (10)

[8] Characterization of deep levels at GaAs/GaAs and GaAs/InAs interfaces grown by MBE-interrupted growth technique [J].

Kaniewska, M. ;

Engstrom, O. ;

Pacholak-Cybulska, M. ;

Sadeghi, M. .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2007, 204 (04) :987-991

[9] Omni-directional reflectors for light-emitting diodes [J].

Kim, Jong Kyu ;

Xi, J. -Q. ;

Schubert, E. Fred .

LIGHT-EMITING DIODES: RESEARCH, MANUFACTURING, AND APPLICATIONS X, 2006, 6134

[10]

Kuhlmann A.V., 2014, ARXIV13077109V2CONDM

← 1 2 3 →