Zinc oxide whiskers with intense ultraviolet emission

被引：3

作者：

Saitoh, H ^{[1
]}

Fukada, Y ^{[1
]}

Ohshio, S ^{[1
]}

机构：

[1] Nagaoka Univ Technol, Dept Chem, Nagaoka, Niigata 9402188, Japan

来源：

JOURNAL OF THE CERAMIC SOCIETY OF JAPAN | 2003年 / 111卷 / 01期

关键词：

orientation; whisker; ZnO; CVD; photoluminescence; cathodoluminescence; SEM;

D O I：

10.2109/jcersj.111.1

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Well-organized ZnO whiskers were grown on the sapphire single crystalline substrate with a relatively high growth rate using the chemical-vapor-deposition technique. The ZnO whiskers showed ultraviolet emission on the photolumineseence and cathodoluminescence spectra. The intensity of the ultraviolet emission was comparable to the blue emission obtained from the commercial blue phosphor.

引用

页码：1 / 3

页数：3

共 15 条

[1] Room temperature excitonic stimulated emission from zinc oxide epilayers grown by plasma-assisted MBE [J].

Bagnall, DM ;

Chen, YF ;

Shen, MY ;

Zhu, Z ;

Goto, T ;

Yao, T .

JOURNAL OF CRYSTAL GROWTH, 1998, 184 :605-609

[2] ZnO thin films prepared by remote plasma-enhanced CVD method [J].

Haga, K ;

Kamidaira, M ;

Kashiwaba, Y ;

Sekiguchi, T ;

Watanabe, H .

JOURNAL OF CRYSTAL GROWTH, 2000, 214 :77-80

[3] ZnO growth on Si substrates by metalorganic vapor phase epitaxy [J].

Ogata, K ;

Kim, SW ;

Fujita, S ;

Fujita, S .

JOURNAL OF CRYSTAL GROWTH, 2002, 240 (1-2) :112-116

[4] Field emission property of Al:ZnO whiskers modified by amorphous carbon and related films [J].

Ohkawara, Y ;

Naijo, T ;

Washio, T ;

Ohshio, S ;

Ito, H ;

Saitoh, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (12) :7013-7017

[5]

OHKAWARA Y, IN PRESS JPN J APPL

[6] Neutral-donor-bound-exciton complexes in ZnO crystals [J].

Reynolds, DC ;

Look, DC ;

Jogai, B ;

Litton, CW ;

Collins, TC ;

Harsch, W ;

Cantwell, G .

PHYSICAL REVIEW B, 1998, 57 (19) :12151-12155

[7] Homogeneous growth of zinc oxide whiskers [J].

Saitoh, H ;

Satoh, M ;

Tanaka, N ;

Ueda, Y ;

Ohshio, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (12A) :6873-6877

[8] Nanoindentation analysis of Al:ZnO epitaxial whiskers [J].

Saitoh, H ;

Namioka, Y ;

Sugata, H ;

Ohshio, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2001, 40 (10) :6024-6028

[9] Epitaxial growth mechanism of chemical-vapor-deposited anatase on strontium titanate substrate [J].

Saitoh, H ;

Sunayama, H ;

Tanaka, N ;

Ohshio, S .

JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, 1998, 106 (11) :1051-1055

[10] Epitaxial growth of zinc oxide whiskers by chemical-vapor deposition under atmospheric pressure [J].

Satoh, M ;

Tanaka, N ;

Ueda, Y ;

Ohshio, S ;

Saitoh, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (5B) :L586-L589

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