Growth and characterization of hillock-free high quality homoepitaxial diamond films

被引：28

作者：

Wang, CL ^{[1
]}

Irie, M ^{[1
]}

Ito, T ^{[1
]}

机构：

[1] Osaka Univ, Dept Elect Engn, Suita, Osaka 5650871, Japan

来源：

基金：

日本学术振兴会;

关键词：

homoepitaxial diamond; chemical vapor deposition; growth hillocks; pre-treatment; cathodoluminescence; band-edge emission;

D O I：

10.1016/S0925-9635(00)00295-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A suitable pre-treatment process to significantly suppress growth hillocks on homoepitaxial diamond surfaces has been successfully developed. Nanometer-scale morphologies obtained for the homoepitaxial diamond films by means of an atomic force microscope show that the mean roughness (root mean square) of the homoepitaxial diamond films with thickness of 1 mu m was approximately 5 nm in the scanning region of 2 x 2 mu m(2). The results from cathodoluminescence (CL) measurements indicate that the developed pre-treatment and deposition by a high power ASTeX microwave plasma chemical vapor deposition (MWP-CVD) apparatus led to growth of homoepitaxial diamond films with high crystalline quality yielding only band-edge emissions as the main peak in CL spectra at low temperatures (80 K). (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：1650 / 1654

页数：5

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