Sol-gel derived In2S3 buffer layers for inverted organic photovoltaic cells

被引：34

作者：

Asian, Ferhat ^{[1
,2
]}

Adam, Getachew ^{[2
]}

Stadler, Philipp ^{[2
]}

Goktas, Abdullah ^{[1
]}

Mutlu, Ibrahim Halil ^{[1
]}

Sariciftci, Niyazi Serdar ^{[2
]}

机构：

[1] Harran Univ, Fac Arts & Sci, Dept Phys, TR-63300 Sanliurfa, Turkey

[2] Johannes Kepler Univ Linz, Linz Inst Organ Solar Cells LIOS, A-4040 Linz, Austria

来源：

SOLAR ENERGY | 2014年 / 108卷

关键词：

Organic solar cells; Indium sulfide; Sol-gel method; P3HT:PCBM; THIN-FILMS; ATOMIC LAYER; POLYMER; MORPHOLOGY; EFFICIENT; CATHODE; OXIDE; ITO;

D O I：

10.1016/j.solener.2014.07.011

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In2S3 - a wide-gap semiconductor - has been implemented in organic photovoltaics using an all-solution based sol gel route. Typically, indium sulfide is deployed as a buffer layer in copper indium sulfide (CIS) photovoltaic systems as electron-selective contact on the bottom electrode. We transferred this idea to organic, solution-processed photovoltaics, exploring its potential in an inverted hybrid device structure. The optical and morphological properties of the films were investigated by UV-Vis transmittance spectroscopy and scanning electron microscopy. The optical studies showed that the In2S3 films exhibit a band gap of similar to 2.25 eV. The effect of In2S3 film thickness on conversion efficiency of the device was also investigated. The device with the 158 +/- 5 nm of In2S3 film thickness provides the best performance with an average short-circuit current density (J(sc)) of approximately 7.96 +/- 0.12 mA/cm(2), open-circuit voltage (V-oc) of 0.609 +/- 0.007 V, fill factor (FF) of 0.49 +/- 0.014, and power conversion efficiency of 3.04 +/- 0.14%. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：230 / 237

页数：8

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