Effect of the position of the Fermi level on the radiation stability of compensated silicon

被引：0
作者：
Gamyk, VS
机构：
来源：
SEMICONDUCTORS | 1996年 / 30卷 / 03期
关键词：
LIFETIME;
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
It is shown in this paper that, by introducing donor-type active centers (for example, thermal donors) into p-type silicon, it is possible to achieve a position of the Fermi level for which radiation defects that result from bombardment by fast electrons will have no effect on the charge-carrier concentration. (C) 1996 American Institute of Physics.
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页码：217 / 218
页数：2
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