共 88 条
Factors Affecting Surface Plasmon Coupling of Quantum Wells in Nitride-Based LEDs: A Review of the Recent Advances
被引:4
作者:

Saleem, Muhammad Farooq
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Guangxi Univ, Sch Phys Sci & Technol, Res Ctr Optoelect Mat & Devices, Nanning 530004, Peoples R China Guangxi Univ, Sch Phys Sci & Technol, Res Ctr Optoelect Mat & Devices, Nanning 530004, Peoples R China

Peng, Yi
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Guangxi Univ, Sch Phys Sci & Technol, Res Ctr Optoelect Mat & Devices, Nanning 530004, Peoples R China Guangxi Univ, Sch Phys Sci & Technol, Res Ctr Optoelect Mat & Devices, Nanning 530004, Peoples R China

Xiao, Kai
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Guangxi Univ, Sch Phys Sci & Technol, Res Ctr Optoelect Mat & Devices, Nanning 530004, Peoples R China Guangxi Univ, Sch Phys Sci & Technol, Res Ctr Optoelect Mat & Devices, Nanning 530004, Peoples R China

Yao, Huilu
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Guangxi Univ, Sch Phys Sci & Technol, Res Ctr Optoelect Mat & Devices, Nanning 530004, Peoples R China Guangxi Univ, Sch Phys Sci & Technol, Res Ctr Optoelect Mat & Devices, Nanning 530004, Peoples R China

Wang, Yukun
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Guangxi Univ, Sch Phys Sci & Technol, Res Ctr Optoelect Mat & Devices, Nanning 530004, Peoples R China Guangxi Univ, Sch Phys Sci & Technol, Res Ctr Optoelect Mat & Devices, Nanning 530004, Peoples R China

Sun, Wenhong
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Guangxi Univ, Sch Phys Sci & Technol, Res Ctr Optoelect Mat & Devices, Nanning 530004, Peoples R China
Guangxi Univ, Sch Phys Sci & Technol, Guangxi Key Lab Relativist Astrophys, Nanning 530004, Peoples R China
Guangxi Univ, Guangxi Key Lab Proc Nonferrous Metall & Featured, Nanning 530004, Peoples R China Guangxi Univ, Sch Phys Sci & Technol, Res Ctr Optoelect Mat & Devices, Nanning 530004, Peoples R China
机构:
[1] Guangxi Univ, Sch Phys Sci & Technol, Res Ctr Optoelect Mat & Devices, Nanning 530004, Peoples R China
[2] Guangxi Univ, Sch Phys Sci & Technol, Guangxi Key Lab Relativist Astrophys, Nanning 530004, Peoples R China
[3] Guangxi Univ, Guangxi Key Lab Proc Nonferrous Metall & Featured, Nanning 530004, Peoples R China
关键词:
LEDs;
GaN;
surface plasmon;
quantum-well;
nanoparticles;
LIGHT-EMITTING DIODE;
EFFICIENCY IMPROVEMENT;
EMISSION;
ENHANCEMENT;
PHOTOLUMINESCENCE;
EXTRACTION;
NANOPARTICLES;
PERFORMANCE;
GAP;
D O I:
10.3390/nano11051132
中图分类号:
O6 [化学];
学科分类号:
0703 ;
摘要:
Surface plasmon (SP)-enhanced quantum-well (QW) LEDs have proved their potential in replacing conventional lighting devices for their high-performance capabilities in ultraviolet (UV), blue and green spectral ranges. The SP-enhanced QW-LEDs have applications in light emission enhancement, light polarization, color conversion, and speed modulation. The electric field of the plasmonic mode of a metal couples with the exciton energy of QWs in resonance results in efficiency enhancement to several folds. The strength of the SP-QW coupling is mainly influenced by the type of metal used for SP enhancement, the metal nanostructure geometry, and the penetration depth of the SP fringing field in the p-GaN. The use of an appropriate dielectric interlayer between the metal and the p-GaN allows further control over SP resonance with QW emission wavelength. The penetration depth defines the p-GaN thickness and the QW period number for effective SP-QW coupling. The optimization of these parameters is key to achieve high efficiencies in SP-enhanced QW-LEDs for various applications. This review explains the SP enhancement mechanism and the key challenges facing the SP enhancement of QW-LEDs. The main factors that affect the SP-QW coupling have been explained in detail based on recent reports devoted to this field.
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