Optical beam induced current investigations of particle detectors

被引:0
作者
Castaldini, A
Cavallini, A
Polenta, L
机构
[1] INFM, I-40127 Bologna, Italy
[2] Univ Bologna, Dept Phys, I-40127 Bologna, Italy
来源
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 2000年 / 222卷 / 01期
关键词
D O I
10.1002/1521-3951(200011)222:1<245::AID-PSSB245>3.0.CO;2-Y
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
OBIC analyses of particle detectors are presented. The depletion layer width W of semi-insulating gallium arsenide Schottky detectors versus biasing has been studied and it is concluded that at high voltages W linearly increases with the applied bias. Furthermore, the electric field distribution in silicon p-i-n detectors has been investigated before and after heavy irradiation and a V-shaped distribution has been assessed.
引用
收藏
页码:245 / 250
页数:6
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