Effects of CF4 Plasma Treatment on the Electrical Characteristics of Poly-Silicon TFTs Using a Tb2O3 Gate Dielectric

被引：11

作者：

Pan, Tung-Ming ^{[1
]}

Li, Zhi-Hong ^{[1
]}

Deng, Chih-Kang ^{[2
]}

机构：

[1] Chang Gung Univ, Dept Elect Engn, Tao Yuan 333, Taiwan

[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2010年 / 57卷 / 07期

关键词：

CF4 plasma power; high-k; interface trap density; Tb2O3; thin-film transistors (TFTs); THIN-FILM TRANSISTORS; POLY-SI TFTS; HIGH-PERFORMANCE; FLUORINE PASSIVATION; IMPLANTATION; DEPOSITION; DEFECTS;

D O I：

10.1109/TED.2010.2047904

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we developed high-k Tb2O3 poly-Si thin-film transistors (TFTs) using different CF4 plasma power treatments. The high-k Tb2O3 poly-Si TFT device with a 20-W plasma power exhibited better electrical characteristics in terms of a highly effective carrier mobility, a high-driving current, a low-threshold voltage, a small subthreshold slope, and a high I-ON/I-OFF current ratio. This result is attributed to the incorporation of fluorine atoms into the Tb2O3/poly-Si interface to reduce the trap-state density. The high-k Tb2O3 poly-Si TFT prepared under a 20-W CF4 plasma power also enhanced electrical reliabilities, including hot carrier and positive bias temperature instability. All of these results suggest that the CF4 plasma-treated poly-Si Tb2O3 TFT is a good candidate for high-performance low-temperature poly-Si TFTs.

引用

页码：1519 / 1526

页数：8

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