InGaN/GaN quantum well interconnected microdisk light emitting diodes

Interconnected microdisk light-emitting diodes (mu -LEDs) have been fabricated from InGaN/GaN single quantum wells grown by low pressure metal organic chemical vapor deposition. These interconnected mu -disk LEDs fit into the same device area taken up by a conventional broad-area LED. The performance characteristic of these interconnected mu -disk LEDs, including I-V and L-I characteristics as well as electroluminescence spectra have been measured and compared with those of the conventional broad-area LEDs. For interconnected mu -disk LEDs, while V-F, the forward biased voltage at 20 mA, was slightly increased, the emission efficiency was increased by as much as 60% over the conventional LEDs for a fixed device area. The results thus suggested that replacing a conventional broad-area LED with an interconnected mu -disk LED, the external quantum efficiency can be significantly enhanced. Finally, the fabrication processes of the interconnected mu -disk LEDs are almost the same as those of the conventional broad-area LEDs. It is thus expected the total yield of these interconnected mu -disk LEDs to be the same as the conventional broad-area LEDs. The present method of utilizing interconnected mu -disk LEDs for improving the brightness of LEDs is applicable to other semiconductor LEDs as well as polymer and organic LEDs. (C) 2000 American Institute of Physics. [S0003-6951(00)04546-0].