Surge Current Capability of GaN E-HEMTs in Reverse Conduction Mode

被引：0
|
作者：
Liu, Yinxiang [1 ]
Han, Shaowen [1 ]
Yang, Shu [1 ]
Sheng, Kuang [1 ]
机构：
[1] Zhejiang Univ, Coll Elect Engn, Hangzhou, Zhejiang, Peoples R China
来源：
2019 31ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | 2019年
基金：
中国国家自然科学基金;
关键词：
GaN; hole injection; normally-off; p-GaN; surge current;
D O I：
10.1109/ispsd.2019.8757634
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
In this paper, we investigate the surge current capability of two types of commercial GaN enhancement-mode HEMTs (E-HEMTs) in the reverse conduction mode, and reveal the impacts of the p-GaN technology and gate-to-source voltage (V-GS). The surge current capability of GaN E-HEMT can be enhanced with ohmic p-GaN contact and positive VGS, owing to higher efficiency of hole injection and channel modulation. To our best knowledge, it is the first report to study the surge current capability and to reveal its underlying mechanisms in lateral GaN power devices.
引用
收藏
页码：439 / 442
页数：4
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