Transmission electron microscopy and atomic force microscopy studies of GaN films grown on AlAs/GaAs(001) substrates

被引：1
作者：
Hu, GQ
Wan, L
Duan, XF
Chen, H
Li, DS
Han, YJ
Huang, Q
Zhou, JM
机构：
[1] Chinese Acad Sci, Beijing Lab Electron Microscopy, Inst Phys, Beijing 100080, Peoples R China
[2] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2003年 / 252卷 / 04期
基金：
中国国家自然科学基金;
关键词：
misorientation; pinhole; molecular beam epitaxy; AlAs; GaAs; GaN;
D O I：
10.1016/S0022-0248(03)00964-3
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Hexagonal GaN (H-GaN) films have been grown on GaAs(0 0 1) substrates with AlAs buffer layers in a molecular beam epitaxy system. Transmission electron microscopy observations show the tilt of the sub-grains of H-GaN film with respect to the substrate. Such mis-orientation is derived from the steps on AlAs surface due to nitridation. Atomic force microscopy observations show a large density of pinholes on the surface of GaN film grown this way. But when an AlN buffer layer is applied, on AlAs/GaAs(0 0 1) substrate, the quality of the GaN film can be much improved with the elimination of mis-orientation and pinholes. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：517 / 522
页数：6
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