Experimental gate misalignment analysis on double gate SOI MOSFETs

被引：21
作者：
Widiez, J [1 ]
Daugé, F [1 ]
Vinet, M [1 ]
Poiroux, T [1 ]
Previtali, B [1 ]
Mouis, M [1 ]
Deleonibus, S [1 ]
机构：
[1] CEA, DRT, LETI, F-38054 Grenoble 9, France
来源：
2004 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS | 2004年
关键词：
D O I：
10.1109/SOI.2004.1391609
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：185 / 186
页数：2
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